TS83C51RD2 ATMEL [ATMEL Corporation], TS83C51RD2 Datasheet - Page 4

• Manufacturer Part Number: TS83C51RD2
• Description: Qualification Package TS87C51RD2 / TS83C51RD2 CMOS 0.5Um
• Manufacturer: ATMEL [ATMEL Corporation]

Qualpack TS87C51RD2/TS83C51RD2
3 Technology Information
3.1
Process Type (Name):
Base Material:
Number Of Masks
Gate Oxide (Logic transistors)
Gate Oxide (EPROM cell)
Polysilicon
Metal
Passivation
June 2001
Thickness
Wafer Thickness (final)
Wafer Diameter
Material
Thickness
Material
Thickness
Number of Layers
Thickness Poly 1
Thickness Poly 2
Number of Layers
Material:
Layer 1 Thickness
Layer 2 Thickness
Layer 3 Thickness
Material
Wafer Process Technology
Z94: 3000A / 15000A – Z92: 2600A / 6400A
Z94 (SCMOS3 Non Volatile - EPROM)
Z92 (SCMOS3 - ROM)
Bulk
475µm
150 mm
Z94: 22
Z92: 14
Silicon Dioxide
110 A
Silicon Dioxide
220 A
2 (Z94), 1 (Z92)
2000A
3000A
2
AlCu
5150A
5150A
7650A
Z94: SiO2 / Nitride Oxide – Z92: SiO2 / Nitride
Atmel Wireless & Microcontrollers