2SK3301_06 TOSHIBA [Toshiba Semiconductor], 2SK3301_06 Datasheet - Page 2

• Manufacturer Part Number: 2SK3301_06
• Description: Silicon N Channel MOS Type Switching Regulatorand DC-DC Converter Applications
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
K3301
Rise time
Turn-on time
Fall time
Turn-off time
(Note 1)
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) GSS
(BR) DSS
DS (ON)
V
⎪Y
I
I
C
I
C
C
Q
Q
GSS
DRP
DSS
I
V
Q
t
t
Q
DSF
DR
t
oss
on
off
rss
t
t
iss
rr
gs
gd
th
fs
r
f
rr
g
⎪
V
I
V
I
V
V
V
V
Duty < = 1%, t
V
I
I
dI
G
D
DR
DR
V
GS
DS
DS
GS
DS
DS
DD
DR
GS
= ±10 μA, V
= 10 mA, V
10 V
= 1 A, V
= 1 A, V
/dt = 100 A/μs
= 720 V, V
= 10 V, I
= 10 V, I
= 25 V, V
= ±30 V, V
= 10 V, I
∼ − 400 V, V
0 V
2
(Ta = 25°C)
GS
GS
w
Test Condition
Test Condition
D
D
D
GS
GS
= 10 μs
DS
GS
= 1 mA
= 0.5 A
DS
= 0.5 A
GS
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
⎯
⎯
= 0 V
= 0 V
= 10 V, I
I
V
D
DD
= 0.5 A
∼ − 400 V
D
= 1 A
V
OUT
900
Min
±30
Min
2.4
0.3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1300
Typ.
0.65
Typ.
1.95
165
110
15
21
15
60
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
6
3
3
2006-11-10
2SK3301
−1.7
Max
Max
±10
100
3.4
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
2
Unit
Unit
nC
nC
nC
μC
μA
μA
pF
pF
pF
ns
ns
Ω
V
V
V
S
A
A
V