2SK3301_10 TOSHIBA [Toshiba Semiconductor], 2SK3301_10 Datasheet
2SK3301_10
Manufacturer Part Number
2SK3301_10
Description
Switching Regulatorand DC-DC Converter Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK3301_10.pdf
(3 pages)
Switching Regulatorand DC-DC Converter Applications
•
•
•
•
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
I
AR
Characteristics
DD
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
= 1 A
= 90 V, T
GS
DC
Pulse (Note 1)
DSS
= 20 kΩ)
th
ch
= 2.4 to 3.4 V (V
= 25°C (initial), L = 257 mH, R
(Note 1)
= 100 μA (max) (V
(Note 2)
DS (ON)
fs
(Ta = 25°C)
| = 0.65 S (typ.)
Symbol
V
V
V
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
AS
AR
stg
D
ch
DS
D
2SK3301
R
R
Symbol
= 15 Ω (typ.)
th (ch-c)
th (ch-a)
= 10 V, I
DS
= 720 V)
−55 to 150
D
Rating
900
900
±30
140
150
2.0
20
= 1 mA)
1
2
1
1
G
Max
6.25
125
= 25 Ω,
°C/W
°C/W
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1B
SC-64
2010-02-05
―
2SK3301
Unit: mm
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2SK3301_10 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) Switching Regulatorand DC-DC Converter Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • Enhancement ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off ...
Page 3
RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...