2SK3472_06 TOSHIBA [Toshiba Semiconductor], 2SK3472_06 Datasheet

2SK3472_06

Manufacturer Part Number

2SK3472_06

Description

Silicon N-Channel MOS Type Switching Regulator Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3472_06.pdf (6 pages)

Current page: 1 of 6
Download datasheet (192Kb)

Switching Regulator Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement model: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Handle with care.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V)

= 90 V, T

Pulse (Note 1)

= 20 kΩ)

DSS

= 25°C (initial), L = 203 mH, R

= 2.0 to 4.0 V (V

(Note 1)

(Note 2)

= 100 μA (max) (V

DS (ON)

(Ta = 25°C)

Symbol

DGR

DSS

GSS

| = 0.8 S (typ.)

stg

Symbol

2SK3472

th (ch-a)

th (ch-c)

= 4.0 mΩ (typ.)

= 10 V, I

= 450 V)

−55 to150

Rating

450

±30

122

150

Max

6.25

125

= 1 mA)

= 25 Ω, I

Unit

°C/W

°C

Unit

= 1 A

Weight: 0.36 g (typ.)

JEDEC

JEITA

TOSHIBA

2-7B1B

SC-64

2006-11-06

―

2SK3472

Unit: mm

Related parts for 2SK3472_06

2SK3472_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V) Switching Regulator Applications • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • Enhancement model ...

Page 2

Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall ...

Page 3

I – 1.0 Common source 10 5. 25°C pulse test 6.0 0.8 8.0 0.6 0 Drain-source voltage V ( – V ...

Page 4

(ON) 16 Common source pulse test 0 −80 − Case temperature Tc (°C) Capacitance – 500 ...

Page 5

Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 μ 100 μ Safe operating area max (pulsed max (continuous operation ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

Related keywords

2SK3472_06 datasheet
2SK3472_06 data sheet
2SK3472_06 pdf datasheet
2SK3472_06 component
2SK3472_06 part
2SK3472_06 distributor
2SK3472_06 RoHS
2SK3472_06 datasheet download