2SK3472_06 TOSHIBA [Toshiba Semiconductor], 2SK3472_06 Datasheet - Page 2

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2SK3472_06

Manufacturer Part Number
2SK3472_06
Description
Silicon N-Channel MOS Type Switching Regulator Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Electrical Characteristics (Ta = 25°C)
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“Miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristic
Characteristic
K3472
Rise time
Turn-on time
Fall time
Turn-off time
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead (Pb)-free package or
lead (Pb)-free finish.
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
t
on
off
rss
t
iss
gs
gd
th
fs
r
Symbol
f
g
V
I
I
DRP
Q
DSF
DR
t
rr
rr
Duty < = 1%, t
V
I
V
I
V
V
V
V
V
V
G
D
GS
DS
DS
GS
DS
DS
DD
GS
= 10 mA, V
= ±10 μA, V
10 V
I
I
dI
0 V
DR
DR
= 450 V, V
= 10 V, I
= 10 V, I
= 25 V, V
= ±25 V, V
= 10 V, I
∼ − 360 V, V
DR
2
= 1 A, V
= 1 A, V
(Ta = 25°C)
/dt = 100 A/μs
Test Condition
w
D
D
D
GS
Test Condition
GS
= 10 μs
DS
GS
= 1 mA
= 0.5 A
DS
= 0.5 A
GS
GS
GS
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
= 10 V, I
= 0 V
= 0 V,
I
D
= 0.5 A
V
DD
D
R
∼ − 200 V
L
= 1 A
= 400 Ω
V
OUT
Min
±30
450
Min
2.0
0.3
Typ.
Typ.
180
350
4.0
0.8
1.3
20
15
30
70
2
7
5
3
2
2006-11-06
2SK3472
Max
Max
−1.7
±10
100
4.0
4.6
1
2
Unit
Unit
μA
μA
nC
μC
pF
ns
μs
V
V
V
Ω
S
A
A
V

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