HN7G02FU_07 TOSHIBA [Toshiba Semiconductor], HN7G02FU_07 Datasheet
HN7G02FU_07
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HN7G02FU_07 Summary of contents
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Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Q1 (transistor): RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent Q1 (Transistor) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Q2 ...
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Q1 Transistor Electrical Characteristics ( ) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input resistor Q2 Electrical Characteristics (MOS-FET) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer ...
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Q1 (Transistor) I – (ON) −50 −30 − 100°C −5 25 −3 −25 −1 −0.5 −0.3 −0.1 −0.3 −1 −3 Input voltage V I (ON) h – −3000 −1000 Ta = 100°C ...
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Q2 (MOS-FET) (a) Switching time test circuit μ – 2.2 2.5 40 2.0 30 1 ...
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100 Common source 25° 0 Drain current I (mA – (ON) D 3000 ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...