HN7G02FU_07 TOSHIBA [Toshiba Semiconductor], HN7G02FU_07 Datasheet - Page 2

• Manufacturer Part Number: HN7G02FU_07
• Description: Power Management Switch Application, Inverter Circuit
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Q1
Q2
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input resistor
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
(
(MOS-FET)
Transistor
Characteristics
Characteristics
Electrical Characteristics
)
Electrical Characteristics
V
R
V
Symbol
Symbol
(BR) DSS
CE (sat)
DS (ON)
⎪Y
I
I
I
I
h
CBO
EBO
GSS
DSS
V
R1
FE
th
fs
⎪
V
V
V
I
V
I
V
V
V
I
C
D
D
(Ta = 25°C)
CB
EB
CE
GS
DS
DS
DS
= 5 mA, I
= 100 μA, V
= 10 mA V
(Ta = 25°C)
2
= −5 V, I
= −50 V, I
= −5 V, I
= 20 V, V
= 3 V, I
= 3 V, I
= 10 V, V
Test Condition
Test Condition
B
D
D
C
GS
C
= −0.25 mA
GS
= 0.1 mA
= 10 mA
DS
E
GS
= 0
= −1 mA
= 0
= 2.5 V
⎯
= 0
= 0
= 0
3.29
Min
120
Min
0.5
20
20
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
−0.1
Typ.
4.7
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
HN7G02FU
2007-11-01
−100
−100
−0.3
6.11
Max
Max
400
1.5
40
⎯
⎯
1
1
Unit
Unit
mS
kΩ
nA
nA
μA
μA
Ω
V
V
V