BFP182TW VISHAY [Vishay Siliconix], BFP182TW Datasheet - Page 3

• Manufacturer Part Number: BFP182TW
• Description: Silicon NPN Planar RF Transistor
• Manufacturer: VISHAY [Vishay Siliconix]

Electrical DC Characteristics
T
Electrical AC Characteristics
T
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
Collector-emitter saturation voltage
DC forward current transfer ratio
Transition frequency
Collector-base capacitance
Collector-emitter capacitance V
Emitter-base capacitance
Noise figure
Power gain
Transducer gain
Document Number 85013
Rev. 3, 20-Jan-99
amb
amb
= 25 _ C, unless otherwise specified
= 25 _ C, unless otherwise specified
Parameter
Parameter
q
y
V
V
V
V
V
f = 900 MHz
V
f = 1.75 GHz
V
Z
V
Z
V
f = 900 MHz
L
L
CE
CE
CB
CE
EB
CE
CE
CE
CE
CE
= Z
= Z
= 0.5 V, f = 1 MHz
= 6 V, I
= 8 V, I
= 10 V, f = 1 MHz
= 8 V, f = 1 MHz
= 6 V, I
= 6 V, I
= 8 V, I
= 8 V, I
= 8 V, I
Lopt
Lopt
V
V
V
I
V
V
C
C
CE
CB
EB
CE
CE
= 1 mA, I
= 15 mA, I
, f = 900 MHz
, f = 1.75 GHz
BFP182T/BFP182TW/BFP182TRW
= 15 V, V
= 10 V, I
= 1 V, I
= 6 V, I
= 8 V, I
Test Conditions
C
C
C
C
C
C
C
= 5 mA, f = 500 MHz
= 20 mA, f = 500 MHz
= 5 mA, Z
= 5 mA, Z
= 20 mA, Z
= 20 mA, Z
= 20 mA, Z
Test Conditions
C
B
C
C
E
B
= 0
= 0
= 20 mA
= 5 mA
BE
= 0
=1.5 mA
= 0
S
S
S
S
0
= Z
= Z
= 50
= 50
= 50
Sopt
Sopt
W
W
W
,
,
,
,
,
Symbol
www.vishay.de FaxBack [phone]
S
G
G
C
C
C
21e
V
f
f
F
F
Symbol
T
T
eb
cb
ce
pe
pe
V
(BR)CEO
I
I
I
h
h
CBO
EBO
CEsat
CES
FE
FE
2
Vishay Telefunken
Min
Min Typ Max Unit
10
50
Typ
5.5
7.5
0.3
0.2
0.7
1.5
2.0
18
12
15
100
0.1
90
Max
100
100
150
0.4
1
GHz
GHz
Unit
pF
pF
pF
dB
dB
dB
dB
dB
3 (6)
m
nA
m
V
V
A
A