BFP193W_07 INFINEON [Infineon Technologies AG], BFP193W_07 Datasheet
BFP193W_07
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BFP193W_07 Summary of contents
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NPN Silicon RF Transistor* For low noise, high-gain amplifiers GHz For linear broadband amplifiers GHz 900 MHz T Pb-free (RoHS compliant) package Qualified according AEC Q101 * Short term ...
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Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-emitter cutoff current Collector-base cutoff current ...
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Electrical Characteristics at T Parameter AC Characteristics (verified by random sampling) Transition frequency mA 500 MHz C CE Collector-base capacitance MHz ...
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SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transistor Chip Data: 0.2738 VAF = 1.935 3.8742 V VAR = 0.94371 - RBM = 1.1824 fF CJE = 18.828 ps TF ...
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Total power dissipation P tot 600 mW 500 450 400 350 300 250 200 150 100 Permissible Pulse Load totmax totDC ...
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Package Outline +0.1 0.3 -0.05 4x 0.1 M Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT343 0.9 ±0.1 2 ±0.2 0.1 MAX. 1.3 0.1 4 ...
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Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). ...