BFP193W_07 INFINEON [Infineon Technologies AG], BFP193W_07 Datasheet - Page 3

• Manufacturer Part Number: BFP193W_07
• Description: NPN Silicon RF Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

1
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
f = 900 MHz
I
f = 1.8 GHz
Power gain, maximum available
I
Z
I
Z
Transducer gain
I
f = 900 MHz
I
f = 1.8 GHz
C
C
C
C
C
C
C
G
L
L
CB
CE
EB
ma
= 50 mA, V
= 10 mA, V
= 10 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= 30 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= 10 V, f = 1 MHz, V
= | S
Lopt
Lopt
21
/ S
, f = 900 MHz
, f = 1.8 GHz
12
CE
CE
CE
CE
CE
CE
CE
| (k-(k²-1)
= 8 V, f = 500 MHz
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
= 8 V, Z
1/2 )
BE
BE
S
S
S
S
S
S
CB
= Z
= Z
= Z
= Z
= Z
= Z
= 0 ,
= 0 ,
= 0 ,
Sopt
Sopt
Sopt
Sopt
L
L
A
1)
= 50
= 50
= 25°C, unless otherwise specified
,
,
,
,
,
,
3
Symbol
f
C
C
C
F
G
|S
T
cb
ce
eb
ma
21e
|
2
min.
6
-
-
-
-
-
-
-
-
-
Values
20.5
13.5
0.63
0.36
2.25
typ.
1.6
15
8
1
9
2007-04-20
max.
0.9
BFP193W
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB