2SC4408_07 TOSHIBA [Toshiba Semiconductor], 2SC4408_07 Datasheet
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2SC4408_07
Related parts for 2SC4408_07
2SC4408_07 Summary of contents
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications • Low saturation voltage (sat) • High collector power dissipation: P • High-speed switching 500 ns (typ.) stg • Complementary to 2SA1680 ...
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Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Marking C4408 (Ta = 25°C) Symbol ...
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I – 2 100 1.6 1.2 0.8 0.4 Common emitter Ta = 25° Collector-emitter voltage – (sat Common emitter ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...