2SC4408_07 TOSHIBA [Toshiba Semiconductor], 2SC4408_07 Datasheet

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2SC4408_07

Manufacturer Part Number
2SC4408_07
Description
Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC4408_07.pdf (4 pages)
Power Amplifier Applications
Power Switching Applications
•
•
•
•
Absolute Maximum Ratings
Low saturation voltage: V
High collector power dissipation: P
High-speed switching: t
Complementary to 2SA1680
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
stg
CE (sat)
= 500 ns (typ.)
= 0.5 V (max) (I
C
(Ta = 25°C)
= 900 mW
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SC4408
j
C
−55 to 150
= 1 A)
Rating
900
150
0.2
80
50
6
2
1
Unit
mW
°C
°C
V
V
V
A
A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1A
2006-11-10
2SC4408
―
Unit: mm

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2SC4408_07 Summary of contents

Page 1

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications • Low saturation voltage (sat) • High collector power dissipation: P • High-speed switching 500 ns (typ.) stg • Complementary to 2SA1680 ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Marking C4408 (Ta = 25°C) Symbol ...

Page 3

I – 2 100 1.6 1.2 0.8 0.4 Common emitter Ta = 25° Collector-emitter voltage – (sat Common emitter ...

Page 4

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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