2SC4408_07 TOSHIBA [Toshiba Semiconductor], 2SC4408_07 Datasheet - Page 3

• Manufacturer Part Number: 2SC4408_07
• Description: Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

0.005
0.003
0.05
0.03
0.01
2.0
1.6
1.2
0.8
0.4
0.5
0.3
0.1
2.0
1.6
1.2
0.8
0.4
0.001 0.003
0
3
1
0
0
0
Common emitter
V CE = 2 V
Common emitter
I C /I B = 20
100
50
0.2
Collector-emitter voltage V
Base-emitter voltage V
1
0.01
Collector current I
0.4
V
0.03
Ta = 100°C
2
CE (sat)
I
I
C
C
30
Common emitter Ta = 25°C
– V
– V
0.6
0.1
CE
BE
– I
Ta = 100°C
−25
3
C
C
25
0.8
0.3
BE
CE
(A)
(V)
25
I B = 2 mA
4
(V)
−25
1
20
1.0
10
15
6
4
3
1.2
5
5
3
0.05
0.03
0.01
0.05
0.03
500
300
100
0.5
0.3
0.1
0.5
0.3
0.1
50
30
10
0.001
10
0.001 0.003
10
5
3
1
5
3
1
0.1
I C max (pulsed)*
I C max (continuous)
DC operation (Ta = 25°C)
Common emitter
V CE = 2 V
Common emitter
I C /I B = 20
0.03
*: Single nonrepetitive pulse Ta = 25°C
Curves must be derated linearly with increase in
temperature.
0.3
Collector-emitter voltage V
0.01
0.01
Collector current I
Collector current I
Safe Operating Area
−25
1
V
0.03
0.03
Ta = 100°C
Ta = −25°C
BE (sat)
h
FE
100
25
3
– I
10 ms*
0.1
0.1
100 ms*
– I
C
C
C
C
V CEO max
0.3
25
0.3
10
CE
(A)
(A)
1 ms*
(V)
1
1
30
2006-11-10
2SC4408
3
3
100
5
5