SIHG17N60D VISHAY [Vishay Siliconix], SIHG17N60D Datasheet - Page 2

• Manufacturer Part Number: SIHG17N60D
• Description: D Series Power MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Note
a. Repetitive rating; pulse width limited by maximum junction temperature.
S12-0685-Rev. A, 02-Apr-12
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Gate Resistance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
DS
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Temperature Coefficient
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
a
J
= 25 °C, unless otherwise noted)
For technical questions, contact:
SYMBOL
V
R
V
t
t
C
I
I
I
C
V
DS(on)
C
Q
Q
V
GS(th)
d(on)
d(off)
I
RRM
GSS
DSS
Q
DS
g
Q
R
SM
I
t
t
oss
t
DS
rss
SD
iss
gd
S
rr
fs
gs
r
f
g
g
rr
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
GS
GS
V
SYMBOL
DS
Reference to 25 °C, I
R
R
T
= 10 V
= 10 V
thJC
J
thJA
= 480 V, V
dI/dt = 100 A/μs, V
2
= 25 °C, I
R
V
V
f = 1 MHz, open drain
V
V
TEST CONDITIONS
g
DS
DS
GS
V
DD
T
= 9.1 , V
DS
J
= 600 V, V
= V
= 0 V, I
= 300 V, I
V
V
= 25 °C, I
= 50 V, I
GS
V
DS
f = 1 MHz
[e-mail]
GS
GS
GS
S
I
= ± 30 V
= 100 V,
D
, I
= 8 A, V
= 0 V,
= 0 V, T
= 8 A, V
D
D
GS
= 250 μA
= 250 μA
D
D
GS
F
www.vishay.com/doc?91000
I
= 10 V
= 8 A
= 8 A
= I
D
TYP.
R
D
= 0 V
= 8 A
GS
-
-
= 20 V
= 1 mA
S
J
DS
,
G
= 125 °C
= 0 V
= 480 V
D
S
MIN.
600
MAX.
0.45
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
62
SiHG17N60D
Vishay Siliconix
Document Number: 91496
0.275
TYP.
1780
140
633
0.7
6.2
1.6
15
45
14
22
22
56
37
30
21
7
-
-
-
-
-
-
-
-
MAX.
± 100
0.340
100
950
1.5
90
45
85
75
60
17
48
15
42
5
1
-
-
-
-
-
-
-
-
-
UNIT
°C/W
UNIT
V/°C
nA
μA
pF
nC
μC
ns
ns


V
V
S
A
V
A