FDD86102LZ_12 FAIRCHILD [Fairchild Semiconductor], FDD86102LZ_12 Datasheet - Page 2

• Manufacturer Part Number: FDD86102LZ_12
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2012 Fairchild Semiconductor Corporation
FDD86102LZ Rev.C1
Notes:
1. R
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting T
4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
ΔV
d(on)
r
d(off)
f
rr
DS(on)
FS
R
GS(th)
iss
oss
rss
g
SD
ΔT
ΔT
g
g
gs
gd
rr
Symbol
θJA
θJC
DSS
GS(th)
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
J
= 25
°
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C, L = 1 mH, I
AS
(Note 2)
= 13 A, V
θJA
Parameter
is determined by the user’s board design.
DD
= 90 V, V
T
J
= 25 °C unless otherwise noted
GS
a. 40 °C/W when mounted on a
= 10 V.
1 in
2
pad of 2 oz copper.
V
V
V
V
V
f = 1 MHz
V
I
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DD
GS
GS
GS
DS
GS
GS
GS
GS
DS
GS
GS
DS
GS
= 8 A, di/dt = 100 A/μs
= 250 μA, referenced to 25 °C
= 250 μA, V
= 250 μA, referenced to 25 °C
2
= 50 V, V
= 50 V, I
= 10 V, R
= 0 V to 10 V
= 0 V to 4.5 V
= 5 V, I
= 0 V, I
= 0 V, I
= 80 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= ±20 V, V
DS
Test Conditions
, I
D
S
S
D
D
D
D
= 8 A
= 2.6 A
D
= 8 A
GS
GEN
GS
= 250 μA
GS
= 8 A,
= 8 A
= 8 A, T
DS
= 7 A
= 0 V,
= 0 V
= 0 V
= 0 V
= 6 Ω
V
I
D
DD
= 8 A
J
= 50 V,
= 125 °C
(Note 2)
(Note 2)
b. 96 °C/W when mounted on a
Min
1.0
100
minimum pad of 2 oz copper.
1157
0.82
0.75
17.8
23.2
31.1
181
7.7
0.6
Typ
1.5
6.6
2.3
2.3
8.7
2.7
2.4
43
43
31
20
18
-6
69
1540
22.5
Max
245
1.3
1.2
±10
3.0
15
70
70
31
40
14
10
32
10
26
13
www.fairchildsemi.com
1
mV/°C
mV/°C
Units
mΩ
nC
pF
pF
pF
μA
μA
nC
nC
nC
nC
ns
Ω
ns
ns
ns
ns
V
S
V
V