FDD86102LZ_12 FAIRCHILD [Fairchild Semiconductor], FDD86102LZ_12 Datasheet - Page 4

• Manufacturer Part Number: FDD86102LZ_12
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2012 Fairchild Semiconductor Corporation
FDD86102LZ Rev.C1
Typical Characteristics
40
30
20
10
10
40
10
Figure 11.
Figure 7.
0
0.001
8
6
4
2
0
1
25
0
Figure 9.
R
I
Current vs Case Temperature
D
θ
= 8 A
JC
= 2.3
Switching Capability
50
0.01
Maximum Continuous Drain
Gate Charge Characteristics
T
t
o
AV
5
C
C/W
Unclamped Inductive
, C
, TIME IN AVALANCHE (ms)
Q
g
ASE TEMPERATURE (
, GATE CHARGE (nC)
V
75
DD
= 50 V
0.1
V
GS
T
10
T
J
= 4.5 V
J
= 25
V
= 125
T
DD
100
J
V
o
= 25 V
= 25 °C unless otherwise noted
DD
C
V
o
GS
C
1
= 75 V
T
= 10 V
o
J
C )
15
= 100
125
o
C
10
150
20
30
4
Figure 10.
2000
1000
0.05
100
10
10
10
10
10
10
10
10
10
100
0.1
10
10
1
1
-1
-2
-3
-4
-5
-6
-7
-8
-9
0.1
0.1
0
Figure 8.
f = 1 MHz
V
V
Figure 12.
GS
THIS AREA IS
LIMITED BY r
GS
= 0 V
= 0 V
5
Gate Leakage Current vs Gate to
V
V
DS
DS
to Source Voltage
V
, DRAIN TO SOURCE VOLTAGE (V)
, DRAIN to SOURCE VOLTAGE (V)
Source Voltage
Operating Area
GS
Capacitance vs Drain
10
, GATE TO SOURCE VOLTAGE (V)
1
DS(on)
Forward BiasSafe
1
T
J
SINGLE PULSE
T
R
T
= 125
J
C
θ
15
JC
= MAX RATED
= 25
= 2.3
o
C
o
C
20
10
o
C/W
T
J
10
= 25
25
o
C
C
C
C
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30
100
100us
10 ms
1 ms
DC
100
300
35