FDD86102LZ_12 FAIRCHILD [Fairchild Semiconductor], FDD86102LZ_12 Datasheet - Page 3

• Manufacturer Part Number: FDD86102LZ_12
• Manufacturer: FAIRCHILD [Fairchild Semiconductor]

©2012 Fairchild Semiconductor Corporation
FDD86102LZ Rev.C1
Typical Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
40
30
20
10
40
30
20
10
Figure 3. Normalized On- Resistance
0
0
Figure 1.
-75
0
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
DS
D
-50
GS
vs Junction Temperature
= 8 A
= 5 V
= 10 V
V
V
T
1
1
-25
DS
GS
On-Region Characteristics
J
,
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
,
T
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
V
DRAIN TO SOURCE VOLTAGE (V)
J
GS
= 150
V
GS
0
= 3.5 V
V
GS
= 4.5 V
2
2
o
= 10 V
C
25
μ
s
50
T
T
J
J
3
3
= -55
T
= 25 °C unless otherwise noted
J
= 25
75
μ
s
o
C
o
o
C
100 125 150
C )
V
4
4
GS
V
GS
= 2.5 V
= 3 V
5
5
3
0.001
0.01
120
0.1
90
60
30
50
10
5
4
3
2
1
0
Figure 2.
Figure 4.
0
1
0.0
Forward Voltage vs Source Current
0
vs Drain Current and Gate Voltage
2
Figure 6.
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
GS
V
= 0 V
SD
0.2
T
, BODY DIODE FORWARD VOLTAGE (V)
J
Normalized On-Resistance
V
On-Resistance vs Gate to
= 150
GS
V
10
I
Source Voltage
D
4
Source to Drain Diode
GS
,
,
GATE TO SOURCE VOLTAGE (V)
T
DRAIN CURRENT (A)
T
= 2.5 V
I
J
J
0.4
o
D
= 125
C
= 25
= 8 A
o
o
C
C
μ
s
0.6
20
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
6
V
V
GS
GS
T
= 3 V
= 4.5 V
J
0.8
= -55
T
J
30
o
= 25
8
C
V
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V
GS
1.0
GS
o
C
= 3.5 V
= 10 V
μ
s
1.2
40
10