SIB410DK VISHAY [Vishay Siliconix], SIB410DK Datasheet
SIB410DK
Related parts for SIB410DK
SIB410DK Summary of contents
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... 1. 1. Ordering Information: SiB410DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... SiB410DK Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... 2.0 2.5 3.0 800 600 = 1.8 V 400 = 2 4 200 1.6 1.4 1 1.0 0.8 0 SiB410DK Vishay Siliconix ° 125 ° ° 0.3 0.6 0.9 1 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...
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... SiB410DK Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 T = 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.8 0.7 0.6 0.5 0.4 0.3 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.10 0.08 0.06 0. ° 0.8 1.0 1 250 μ 0.001 ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67020 S10-2249-Rev. A, 04-Oct-10 New Product 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiB410DK Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...
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... SiB410DK Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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PowerPAK SC75-6L PIN1 PIN6 K3 BACKSIDE VIEW OF SINGLE SINGLE PAD DIM MILLIMETERS Min Nom Max A 0.675 0.75 0. 0.05 b 0.18 0.25 0.33 C 0.15 0.20 0.25 D 1.53 1.60 1.70 D1 0.57 0.67 ...
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RECOMMENDED PAD LAYOUT FOR PowerPAK 0.250 (0.01) 0.300 (0.012) (0.043) 1.700 (0.067) 1.100 0.300 (0.012) Return to Index Document Number: 70488 Revision: 21-Jan-08 ® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.400 (0.016) 0.370 (0.015) 0.200 (0.008) 0.545 (0.021) 1 0.250 ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...