SIB455EDK VISHAY [Vishay Siliconix], SIB455EDK Datasheet - Page 3

• Manufacturer Part Number: SIB455EDK
• Description: P-Channel 12-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65599
S09-2682-Rev. A, 14-Dec-09
0.16
0.12
0.08
0.04
0.00
1.0
0.8
0.6
0.4
0.2
0.0
25
20
15
10
5
0
0.0
0
0
V
GS
= 1.5 V
Gate Current vs. Gate-Source Voltage
0.5
On-Resistance vs. Drain Current
5
3
V
V
GS
DS
Output Characteristics
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
1.0
I
D
V
- Drain Current (A)
10
GS
6
V
GS
= 1.8 V
1.5
= 5 V thru 2.5 V
15
9
V
2.0
T
V
GS
J
GS
= 25 °C
= 4.5 V
V
V
V
= 2.5 V
GS
GS
GS
20
12
2.5
= 2 V
= 1.5 V
= 1 V
25
3.0
15
10
10
10
10
10
10
10
10
10
-10
10
-2
-3
-4
-5
-6
-7
-8
-9
8
6
4
2
0
8
6
4
2
0
0.0
0
0
V
DS
I
Gate Current vs. Gate-Source Voltage
D
= 3 V
= 8 A
5
3
V
V
V
0.5
DS
GS
GS
Transfer Characteristics
T
T
Q
C
J
= 6 V
g
- Gate-to-Source Voltage (V)
= 150 °C
- Gate-to-Source Voltage (V)
= 125 °C
- Total Gate Charge (nC)
T
Gate Charge
10
6
C
= 25 °C
1.0
V
DS
Vishay Siliconix
15
= 9.6 V
SiB455EDK
9
T
T
C
J
= 25 °C
= - 55 °C
1.5
www.vishay.com
20
12
2.0
25
15
3