SIB456DK VISHAY [Vishay Siliconix], SIB456DK Datasheet

SIB456DK

Manufacturer Part Number

SIB456DK

Description

N-Channel 100 V (D-S) MOSFET

Manufacturer

VISHAY [Vishay Siliconix]

Datasheet

1.SIB456DK.pdf (9 pages)

Current page: 1 of 9
Download datasheet (225Kb)

Notes

a. T

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 105 °C/W.

S12-1133-Rev. A, 21-May-12

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Pulsed Drain Current (t = 300 μs)

Continuous Source-Drain Diode Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

100

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

= 25 °C.

(V)

Ordering Information:

SiB456DK-T1-GE3 (Lead (Pb)-free and Halogen-free)

1.60 mm

0.310 at V

0.185 at V

www.vishay.com

PowerPAK SC-75-6L-Single

DS(on)

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

() MAX.

= 4.5 V

= 10 V

= 150 °C)

b, f

N-Channel 100 V (D-S) MOSFET

1.60 mm

For technical questions, contact:

6.3

4.9

(A)

d, e

= 25 °C, unless otherwise noted)

Steady State

1.8 nC

L = 0.1 mH

New Product

(Typ.)

t  5 s

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

= 25 °C

= 70 °C

pmostechsupport@vishay.com

FEATRUES

• TrenchFET

• New Thermally Enhanced PowerPAK

• 100 % R

• Material categorization: For definitions of compliance

APPLICATIONS

• DC/DC Converters

• Full-Bridge Converters

• For Power Bricks and POL Power

Part # code

Package

- Small Footprint Area

- Low On-Resistance

please see

Symbol

, T

thJC

thJA

stg

Marking Code

www.vishay.com/doc?91000

and UIS Tested

A J X

X X X

www.vishay.com/doc?99912

Power MOSFET

Typical

7.5

Lot Traceability

and Date code

- 55 to 150

2.7

2.2

2.4

1.6

Limit

± 20

0.29

100

260

6.3

2.4

8.4

b, c

Maximum

9.5

Vishay Siliconix

Document Number: 62715

SiB456DK

N-Channel MOSFET

SC-75

°C/W

Unit

°C

Related parts for SIB456DK

SIB456DK Summary of contents

Page 1

... 1. 1. Ordering Information: SiB456DK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... 2 2.2 A, dI/dt = 100 A/μ ° pmostechsupport@vishay.com www.vishay.com/doc?91000 SiB456DK Vishay Siliconix Min. Typ. Max. Unit 100 V 54 mV/°C - 4.1 1 ± 100 nA 1 μ 0.153 0.185  0.220 0.310 3.7 S ...

Page 3

... 1.8 1.6 1.4 1 1.0 0.8 0 On-Resistance vs. Junction Temperature 3 pmostechsupport@vishay.com www.vishay.com/doc?91000 SiB456DK Vishay Siliconix = 25 ° 125 ° ° 1.0 2.0 3.0 4.0 5 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... 0.01 DC BVDSS Limited 0 100 V - Drain-to-Source Voltage ( > minimum V at which R is specified GS GS DS(on) Safe Operating Area, Junction-to-Ambient 4 pmostechsupport@vishay.com www.vishay.com/doc?91000 SiB456DK Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS 1000 0.01 0.1 1 ...

Page 5

... THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product 125 150 pmostechsupport@vishay.com www.vishay.com/doc?91000 SiB456DK Vishay Siliconix 75 100 125 150 T - Case Temperature (°C) C Power Derating Document Number: 62715 ...

Page 6

... THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT New Product - Square Wave Pulse Duration ( Square Wave Pulse Duration (s) 6 pmostechsupport@vishay.com www.vishay.com/doc?91000 SiB456DK Vishay Siliconix Notes Duty Cycle Per Unit Base = R = 105 °C/W ...

Page 7

PowerPAK SC75-6L PIN1 PIN6 K3 BACKSIDE VIEW OF SINGLE SINGLE PAD DIM MILLIMETERS Min Nom Max A 0.675 0.75 0. 0.05 b 0.18 0.25 0.33 C 0.15 0.20 0.25 D 1.53 1.60 1.70 D1 0.57 0.67 ...

Page 8

RECOMMENDED PAD LAYOUT FOR PowerPAK 0.250 (0.01) 0.300 (0.012) (0.043) 1.700 (0.067) 1.100 0.300 (0.012) Return to Index Document Number: 70488 Revision: 21-Jan-08 ® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.400 (0.016) 0.370 (0.015) 0.200 (0.008) 0.545 (0.021) 1 0.250 ...

Page 9

... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...

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