SIB457EDK VISHAY [Vishay Siliconix], SIB457EDK Datasheet
SIB457EDK
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SIB457EDK Summary of contents
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... 1. 1. Ordering Information: SiB457EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... SiB457EDK Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge ...
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... 1 2.0 2.5 3.0 0.0 1.5 1.4 1.3 1.2 1.1 1.0 = 2.5 V 0.9 0.8 = 4 SiB457EDK Vishay Siliconix T = 150 ° ° Gate-to-Source Voltage (V) GS Gate Current vs. Gate-Source Voltage ° 125 ° °C C 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics V = 4.5 V, 2.5 V ...
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... SiB457EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 Total Gate Charge (nC) g Gate Charge 100 T = 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Soure-Drain Diode Forward Voltage 0.8 0 250 µA D 0.6 0.5 0.4 0.3 0 ...
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... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 64816 S09-1497-Rev. B, 10-Aug- 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiB457EDK Vishay Siliconix 100 125 T - Case Temperature (°C) C Power Derating www.vishay.com 150 5 ...
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... SiB457EDK Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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PowerPAK SC75-6L PIN1 PIN6 K3 BACKSIDE VIEW OF SINGLE SINGLE PAD DIM MILLIMETERS Min Nom Max A 0.675 0.75 0. 0.05 b 0.18 0.25 0.33 C 0.15 0.20 0.25 D 1.53 1.60 1.70 D1 0.57 0.67 ...
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RECOMMENDED PAD LAYOUT FOR PowerPAK 0.250 (0.01) 0.300 (0.012) (0.043) 1.700 (0.067) 1.100 0.300 (0.012) Return to Index Document Number: 70488 Revision: 21-Jan-08 ® SC75-6L Single 1.250 (0.049) 0.250 (0.01) 0.400 (0.016) 0.370 (0.015) 0.200 (0.008) 0.545 (0.021) 1 0.250 ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...