SUP90N06-6M0P_09 VISHAY [Vishay Siliconix], SUP90N06-6M0P_09 Datasheet - Page 4

• Manufacturer Part Number: SUP90N06-6M0P_09
• Description: N-Channel 60-V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SUP90N06-6m0P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
0.01
100
1.0
0.1
10
10
76
73
70
67
64
61
58
8
6
4
2
0
0.0
- 50
0
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
I
- 25
D
= 1 mA
0.2
I
D
17
= 50 A
V
SD
0
T
Q
J
g
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
0.4
- Total Gate Charge (nC)
150 °C
V
25
Gate Charge
DS
34
= 30 V
50
V
0.6
DS
= 15 V
75
25 °C
51
0.8
100
V
DS
125
68
1.0
= 45 V
150
1.2
175
85
- 0.4
- 1.0
- 1.6
- 2.2
100
2.0
1.7
1.4
1.1
0.8
0.5
0
0.8
0.2
10
0 .
1
- 50
- 50
0
0
Maximum Drain Current vs. Case Temperature
0
1
On-Resistance vs. Junction Temperature
I
- 25
- 25
D
= 20 A
0.0001
0
0
T
150 °C
T
J
J
- Junction Temperature (°C)
- Junction Temperature (°C)
Threshold Voltage
25
25
0.001
50
50
T
AV
25 °C
S09-0703-Rev. B, 27-Apr-09
V
GS
Document Number: 69536
I
(s)
75
D
75
0.01
= 10 V
= 250 µA
100
100
I
D
= 5 mA
125
125
0
1 .
150
150
175
175
1.0