SIA907EDJT-T1-GE3 VISHAY [Vishay Siliconix], SIA907EDJT-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIA907EDJT-T1-GE3
• Description: Dual P-Channel 20 V (D-S) MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SiA907EDJT
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67874.
www.vishay.com
6
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.01
0.1
1
1
10
10
-4
0.02
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
Single Pulse
Duty Cycle = 0.5
0.2
Single Pulse
0.02
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
This document is subject to change without notice.
10
-2
10
-3
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
2
DM
S11-0862-Rev. A, 02-May-11
100
Z
th JA
th JA
Document Number: 67874
t
t
1
2
www.vishay.com/doc?91000
(t)
= 110 °C/W
1000
10
-1