2SK2614_06 TOSHIBA [Toshiba Semiconductor], 2SK2614_06 Datasheet
2SK2614_06
Related parts for 2SK2614_06
2SK2614_06 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L Chopper Regulator, DC/DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON-resistance High forward transfer admittance Low leakage current : I = 100 μA (max) (V DSS Enhancement ...
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Electrical Characteristics Characteristic Gate leakage current Drain cutoff current Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate charge ...
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I – Common source 25°C 10 Pulse test 0.2 0.4 0.6 0.8 Drain-source voltage V DS (V) I – V ...
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R – (ON) 0.20 Common source Pulse test 0. −80 − Ambient temperature Ta (°C) Capacitance ...
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SINGLE PULSE SAFE OPERATING AREA 300 100 I D max (pulse)* 50 100 μ max (continuous ms OPERATION 3 T =25° Single pulse 0.5 °C Ta=25 0.3 Curves must be ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...