FSL234D3 INTERSIL [Intersil Corporation], FSL234D3 Datasheet

FSL234D3

Manufacturer Part Number

FSL234D3

Description

4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Manufacturer

INTERSIL [Intersil Corporation]

Datasheet

1.FSL234D3.pdf (8 pages)

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June 1998

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Features

• 4A, 250V, r

• Total Dose

• Single Event

• Dose Rate

• Photo Current

• Neutron

Ordering Information

Formerly available as type

Package

10K

100K

RAD LEVEL

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm

- Typically Survives 3E9 RAD (Si)/s at 80% BV

- Typically Survives 2E12 if Current Limited to I

- 4.0nA Per-RAD(Si)/s Typically

- Maintain Pre-RAD Speciﬁcations

- Usable to 1E14 Neutrons/cm

for 1E13 Neutrons/cm

up to 80% of Rated Breakdown and

of 10V Off-Bias

DS(ON)

Commercial

TXV

Commercial

TXV

Space

SCREENING LEVEL

= 0.610

TA17638

PART NUMBER/BRAND

FSL234D1

FSL234D3

FSL234R1

FSL234R3

FSL234R4

Intersil Corporation 1999

FSL234D, FSL234R

with

SEGR Resistant, N-Channel Power MOSFETs

DSS

TO-205AF

3-41

Description

The Discrete Products Operation of Intersil Corporation has

developed a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

tions. Enhanced Power MOSFET immunity to Single Event

Effects (SEE), Single Event Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

Numerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

exposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Symbol

4A, 250V, 0.610 Ohm, Rad Hard,

File Number

4030.3

Related parts for FSL234D3

FSL234D3 Summary of contents

Page 1

... This type can be operated directly from integrated circuits. Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Intersil for any desired deviations PART NUMBER/BRAND from the data sheet. FSL234D1 FSL234D3 Symbol FSL234R1 FSL234R3 FSL234R4 TO-205AF © ...

Page 2

Absolute Maximum Ratings Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

Source to Drain Diode Speciﬁcations PARAMETER SYMBOL Forward Voltage V SD Reverse Recovery Time t rr Electrical Speciﬁcations up to 100K RAD PARAMETER Drain to Source Breakdown Volts (Note 3) Gate to Source Threshold Volts (Note 3) Gate to Body ...

Page 4

Typical Performance Curves - CASE TEMPERATURE ( C FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE Q 12V CHARGE FIGURE 5. BASIC GATE ...

Page 5

Typical Performance Curves 0.001 Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN CURRENT I AS TRANSFORMER - VARY t TO OBTAIN P 50 REQUIRED PEAK 20V ...

Page 6

Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) PARAMETER Gate to Source Leakage Current Zero Gate Voltage Drain Current Drain to Source ...

Page 7

Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent 1. Rad Hard TXV Equivalent - Standard Data Package A. Certiﬁcate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet D. Group A - Attributes Data Sheet ...

Page 8

TO-205AF 3 LEAD JEDEC TO-205AF HERMETIC METAL CAN PACKAGE ØD Ø SEATING PLANE L b Ø All Intersil semiconductor products are manufactured, ...

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