FSL234D3 INTERSIL [Intersil Corporation], FSL234D3 Datasheet - Page 3

• Manufacturer Part Number: FSL234D3
• Description: 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
• Manufacturer: INTERSIL [Intersil Corporation]

Source to Drain Diode Specifications
Electrical Specifications up to 100K RAD
NOTES:
Single Event Effects (SEB, SEGR)
NOTES:
Typical Performance Curves
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
Forward Voltage
Reverse Recovery Time
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
Single Event Effects Safe Operating
Area
1. Pulse test, 300 s Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
300
200
100
0
0
PARAMETER
TEMP = 25
TEST
-5
PARAMETER
LET = 26MeV/mg/cm
LET = 37MeV/mg/cm
FLUENCE = 1E5 IONS/cm
o
C
2
(typical), T = 25
-10
V
GS
SYMBOL
(V)
V
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
2
2
t
SD
, RANGE = 43
, RANGE = 36
rr
-15
SYMBOL
2
SEESOA
o
(Note 4)
C.
(TYPICAL)
Unless Otherwise Specified
I
I
SD
SD
GS
-20
FSL234D, FSL234R
= 4A
= 4A, dI
= 12V, V
T
C
r
SYMBOL
V
DS(ON)12
V
BV
SPECIES
TEST CONDITIONS
= 25
DS(ON)
GS(TH)
I
I
GSS
DSS
SD
DSS
ION
Br
Br
Br
Br
Ni
DS
o
-25
/dt = 100A/ s
C, Unless Otherwise Specified
3-43
= 0V and V
ENVIRONMENT (NOTE 5)
V
V
V
V
V
V
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GS
GS
GS
GS
GS
GS
1E-3
1E-4
1E-5
1E-6
1E-7
TYPICAL LET
(MeV/mg/cm)
TEST CONDITIONS
= 0, I
= V
= 20V, V
= 0, V
= 12V, I
= 12V, I
GS
10
DS
= 0V, V
26
37
37
37
37
D
DS
, I
= 1mA
D
D
GAMMA DOT CURRENT TO I
D
= 200V
DS
= 4A
= 2A
= 1mA
DS
= 0V
= 80% BV
30
MIN
0.6
RANGE ( )
-
TYPICAL
DRAIN SUPPLY (V)
43
36
36
36
36
DSS
TYP
MIN
250
1.5
100
.
-
-
-
-
-
-
V
APPLIED
GS
(V)
-20
-10
-15
-20
AS
-5
BIAS
MAX
400
0.610
1.8
MAX
2.56
100
4.0
25
-
300
100A
300A
30A
ILM = 10A
MAXIMUM
V
(NOTE 6)
DS
UNITS
UNITS
250
250
200
125
(V)
50
ns
BIAS
V
nA
V
V
V
A
1000