ISPLSI5128VE LATTICE [Lattice Semiconductor], ISPLSI5128VE Datasheet - Page 10

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ISPLSI5128VE

Manufacturer Part Number
ISPLSI5128VE
Description
In-System Programmable 3.3V SuperWIDE High Density PLD
Manufacturer
LATTICE [Lattice Semiconductor]
Datasheet

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Supply Voltage V
Input Voltage Applied ............................... -0.5 to +5.6V
Tri-Stated Output Voltage Applied ........... -0.5 to +5.6V
Storage Temperature ................................ -65 to 150°C
Case Temp. with Power Applied .............. -55 to 125°C
Max. Junction Temp. (T
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
2. Compliance with the Thermal Management section of the Lattice Semiconductor Data Book or CD-ROM is a requirement.
V
V
C
C
C
Absolute Maximum Ratings
DC Recommended Operating Condition
Capacitance (T
Erase Reprogram Specification
ispLSI Erase/Reprogram Cycles
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
CC
CCIO
1
2
3
SYMBOL
SYMBOL
I/O Capacitance
Clock Capacitance
Global Input Capacitance
cc
PARAMETER
.................................. -0.5 to +5.4V
Supply Voltage
I/O Reference Voltage
A
=25°C,f=1.0 MHz)
J
) with Power Applied ... 150°C
PARAMETER
PARAMETER
1, 2
Commercial
Industrial
10
MINIMUM
10000
T
T
Specifications ispLSI 5128VE
A
A
= 0°C to +70°C
= -40°C to +85°C
TYPICAL
10
10
10
MAXIMUM
UNITS
pf
pf
pf
MIN.
3.00
3.00
2.3
V = 3.3V, V = 0.0V
V = 3.3V, V = 0.0V
V = 3.3V, V = 0.0V
CC
CC
CC
TEST CONDITIONS
MAX.
3.60
3.60
3.60
UNITS
Cycles
I/O
CK
G
Table 2-0005/5KVE
Table 2-0006/5KVE
Table 2-0008/5KVE
UNITS
V
V
V

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