HN58C1001P-15 HITACHI [Hitachi Semiconductor], HN58C1001P-15 Datasheet

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HN58C1001P-15

Manufacturer Part Number
HN58C1001P-15
Description
1M EEPROM (128-kword x 8-bit) Ready/Busy and RES function
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet

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Description
The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word
bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS
memory technology and CMOS process and circuitry technology. It also has a 128-byte page programming
function to make the write operations faster.
Features
Single supply: 5.0 V ± 10%
Access time: 150 ns (max)
Power dissipation
On-chip latches: address, data, CE, OE, WE
Automatic byte write: 10 ms (max)
Automatic page write (128 bytes): 10 ms (max)
Data polling and RDY/Busy
Data protection circuit on power on/off
Conforms to JEDEC byte-wide standard
Reliable CMOS with MNOS cell technology
10
10 years data retention
Software data protection
Write protection by RES pin
4
Active: 20 mW/MHz, (typ)
Standby: 110 µW (max)
erase/write cycles (in page mode)
1M EEPROM (128-kword
Ready/Busy and RES function
HN58C1001 Series
8-bit)
ADE-203-028G (Z)
Oct. 31, 1997
Rev. 7.0
8-

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HN58C1001P-15 Summary of contents

Page 1

EEPROM (128-kword Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word bit. It has realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry ...

Page 2

... HN58C1001 Series Ordering Information Type No. Access time HN58C1001P-15 150 ns HN58C1001FP-15 150 ns HN58C1001T-15 150 ns Pin Arrangement HN58C1001P/FP Series 1 32 RDY/Busy 2 A16 31 3 A14 A12 I/ ...

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Block Diagram V CC High voltage generator V SS RES RES Address buffer and latch A7 to A16 Operation Table CE Operation Read V IL Standby V IH Write V IL Deselect V IL ...

Page 4

HN58C1001 Series Absolute Maximum Ratings Parameter Supply voltage relative Input voltage relative Operating temperature range* Storage temperature range Notes: 1. Vin min = –3.0 V for pulse width 2. Including electrical characteristics and ...

Page 5

Capacitance (Ta = 25° MHz) Parameter 1 Input capacitance* 1 Output capacitance* Note: 1. This parameter is periodically sampled and not 100% tested. AC Characteristics ( +70 °C, V Test Conditions Input pulse levels: ...

Page 6

HN58C1001 Series Write Cycle Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE hold time (CE controlled write setup time ...

Page 7

Timing Waveforms Read Timing Waveform Address CE OE High WE Data Out RES t ACC Data out valid t RR HN58C1001 Series DFR 7 ...

Page 8

HN58C1001 Series Byte Write Timing Waveform (1) (WE Controlled) Address Din RDY/Busy t RES RES OES t DS High ...

Page 9

Byte Write Timing Waveform (2) (CE Controlled) Address Din High-Z RDY/Busy t RES RES OES HN58C1001 Series ...

Page 10

HN58C1001 Series Page Write Timing Waveform (1) (WE Controlled) *6 Address A0 to A16 OES Din High-Z RDY/Busy t RP RES t RES ...

Page 11

Page Write Timing Waveform (2) (CE Controlled) *6 Address A0 to A16 OES Din High-Z RDY/Busy t RP RES t RES ...

Page 12

HN58C1001 Series Data Polling Timing Waveform Address Din X I/ OEH Dout OES t DW Dout X ...

Page 13

Toggle bit This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each read. When the internal ...

Page 14

HN58C1001 Series Software Data Protection Timing Waveform (1) (in protection mode Address 5555 Data AA Software Data Protection Timing Waveform (2) (in non-protection mode Address 5555 Data BLC 5555 ...

Page 15

Functional Description Automatic Page Write Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle. Following the initial byte cycle, an additional 1 to 127 bytes can be written ...

Page 16

HN58C1001 Series Write/Erase Endurance and Data Retention Time 4 The endurance is 10 cycles in case of the page programming and 10 (1% cumulative failure rate). The data retention time is more than 10 years when a device is page- ...

Page 17

Data Protection at V On/Off CC When V is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may act trigger and turn the EEPROM to program mode by mistake. ...

Page 18

HN58C1001 Series 3. Software data protection To prevent unintentional programming, this device has the software data protection (SDP) mode. The SDP is enabled by inputting the following 3 bytes code and write data. SDP is not enabled if only the ...

Page 19

... Package Dimensions HN58C1001P Series (DP-32 2.30 Max 2.54 0.25 41.90 42.50 Max 17 16 1.20 0.48 0.10 HN58C1001 Series 15.24 + 0.11 0.25 – 0.05 0 – 15 Hitachi Code DP-32 JEDEC — EIAJ Conforms Weight (reference value) 5.1 g Unit ...

Page 20

HN58C1001 Series Package Dimensions (cont.) HN58C1001FP Series (FP-32D) 20.45 20.95 Max 32 1 1.00 Max 1.27 0.40 0.08 0.38 0.06 Dimension including the plating thickness Base material dimension 0.10 0.15 M 14.14 0.30 1.42 0.80 0.20 Hitachi ...

Page 21

Package Dimensions (cont.) HN58C1001T Series (TFP-32DA) 8.00 8.20 Max 32 1 0.22 0.08 0.20 0.06 0.45 Max 0.10 Dimension including the plating thickness Base material dimension 17 16 0.50 0.08 M 14.00 0.20 HN58C1001 Series 0.80 0 – 5 0.50 ...

Page 22

HN58C1001 Series When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, ...

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