HN58S256AT-20 HITACHI [Hitachi Semiconductor], HN58S256AT-20 Datasheet - Page 4

• Manufacturer Part Number: HN58S256AT-20
• Description: 256 k EEPROM (32-kword x 8-bit)
• Manufacturer: HITACHI [Hitachi Semiconductor]

HN58S256A Series
Absolute Maximum Ratings
Parameter
Power supply voltage relative to V
Input voltage relative to V
Operationg temperature range*
Storage temperature range
Notes: 1. Vin min = –3.0 V for pulse width
Recommended DC Operating Conditions
Parameter
Supply voltage
Input voltage
Operating temperature
Notes: 1. V
DC Characteristics (Ta = 0 to +70 C, V
Parameter
Input leakage current
Output leakage current
Standby V
Operating V
Output low voltage
Output high voltage
2. Including electrical characteristics and data retention
3. Should not exceed V
2. V
CC
CC
current
IL
IH
current
min: –1.0 V for pulse width
max: V
CC
+ 1.0 V for pulse width
SS
Symbol
I
I
I
I
I
V
V
LI
LO
CC1
CC2
CC3
OL
OH
2
CC
SS
+ 1.0 V.
Min
—
—
—
—
—
—
—
V
CC
0.8
50 ns.
50 ns
Typ
—
—
—
—
—
—
—
—
Symbol
V
V
V
V
Topr
50 ns.
Symbol
V
Vin
Topr
Tstg
CC
SS
IL
IH
CC
CC
= 2.2 to 3.6 V)
Max
2
2
10
500
8
12
0.4
—
Min
2.2
0
–0.3*
Vcc
0
Value
–0.6 to +4.6
–0.5*
0 to +70
–55 to +125
1
0.7
Unit
mA
mA
V
V
1
A
A
A
A
to +4.6*
Typ
3.0
0
—
—
—
Test conditions
V
V
CE = V
CE = V
CE = V
Iout = 0 mA, Duty = 100%,
Cycle = 1 s at V
Iout = 0 mA, Duty = 100%,
Cycle = 150 ns at V
I
I
OL
OH
CC
CC
3
= 1.0 mA
= –100 A
= 3.6 V, Vin = 0 to 3.6 V
= 3.6 V, Vout = 3.6/0.4 V,
IH
CC
IH
, Vin = 0 to 3.6 V
Max
3.6
0
0.4
V
70
CC
+ 0.3*
CC
Unit
V
V
C
C
2
= 3.6 V
CC
Unit
V
V
V
V
= 3.6 V
C