HN58S256AT-20 HITACHI [Hitachi Semiconductor], HN58S256AT-20 Datasheet - Page 5

• Manufacturer Part Number: HN58S256AT-20
• Description: 256 k EEPROM (32-kword x 8-bit)
• Manufacturer: HITACHI [Hitachi Semiconductor]

Capacitance (Ta = 25 C, f = 1 MHz)
Parameter
Input capacitance*
Output capacitance*
Note:
AC Characteristics (Ta = 0 to +70 C, V
Test Conditions
• Input pulse levels: 0.4 V to 1.9 V (V
• Input rise and fall time:
• Input timing reference levels: 0.8, 1.8 V
• Output load: 1TTL Gate +100 pF
• Output reference levels: 1.1 V, 1.1 V (V
Read Cycle
Parameter
Address to output delay
CE to output delay
OE to output delay
Address to output hold
OE (CE) high to output float*
1. This parameter is periodically sampled and not 100% tested.
1
1
1
5 ns
Symbol
t
t
t
t
t
ACC
CE
OE
OH
DF
Symbol
Cin
Cout
CC
HN58S256A
-15
Min
—
—
10
0
0
CC
2.7V), 0.4V to 2.4 V (V
2.7V),1.5 V, 1.5 V (V
Min
—
—
Max
150
150
80
—
100
CC
= 2.2 to 3.6 V)
-20
Min
—
—
10
0
0
Typ
—
—
Max
200
200
100
—
100
CC
Max
6
12
Unit
ns
ns
ns
ns
ns
CC
> 2.7 V)
> 2.7 V)
HN58S256A Series
Unit
pF
pF
Test conditions
CE = OE = V
OE = V
CE = V
CE = OE = V
CE = V
Test conditions
Vin = 0 V
Vout = 0 V
IL
IL
IL
, WE = V
, WE = V
, WE = V
IL
IL
, WE = V
, WE = V
IH
IH
IH
IH
IH