AT49BV4096-15RC ATMEL Corporation, AT49BV4096-15RC Datasheet

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AT49BV4096-15RC

Manufacturer Part Number
AT49BV4096-15RC
Description
4-Megabit 256K x 16 3-volt Only CMOS Flash Memory
Manufacturer
ATMEL Corporation
Datasheet
Features
Description
The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized
as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than
50 A.
To allow for simple in-system reprogrammability, the AT49BV4096/LV4096 does not
require high input voltages for programming. Reading data out of the device is similar
to reading from an EPROM; it has standard CE, OE, and WE inputs to avoid bus
Pin Configurations
Pin Name
A0 - A17
CE
OE
WE
RESET
V
I/O0 - I/O15
NC
PP
VPP
A15
A13
A17
A11
WE
Low Voltage Operation
Fast Read Access Time - 120 ns
Internal Erase/Program Control
Sector Architecture
Fast Sector Erase Time - 10 seconds
Word-By-Word Programming - 10 s/Word
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
Typical 10,000 Write Cycles
NC
NC
A9
A6
A4
A2
RESET
A14
A12
A10
NC
NC
NC
A8
A7
A5
A3
A1
- 2.7V Read
- 5V Program/Erase
- One 8K Words (16K bytes) Boot Block with Programming Lockout
- Two 8K Words (16K bytes) Parameter Blocks
- One 232K Words (464K bytes) Main Memory Array Block
- 25 mA Active Current
- 50 A CMOS Standby Current
4
6
8
10
12
14
16
18
20
22
24
1
3
5
7
9
11
13
15
17
19
21
23
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Program/Erase
Power Supply
Data
Inputs/Outputs
No Connect
2
TSOP Top View
Type 1
48
46
44
42
40
38
36
34
32
30
28
26
47
45
43
41
39
37
35
33
31
29
27
25
NC
I/O15
I/O14
I/O12
VCC
I/O3
I/O2
I/O1
I/O0
GND
A0
I/O13
A16
GND
I/O7
I/O6
I/O5
I/O4
I/O11
I/O10
I/O9
I/O8
OE
CE
I/O10
I/O11
GND
VPP
I/O0
I/O8
I/O9
I/O2
I/O3
A17
I/O1
OE
NC
CE
A7
A6
A5
A4
A3
A2
A0
A1
SOIC (SOP)
1
2
3
5
6
7
8
9
10
11
12
13
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET
A8
A9
A10
A11
A12
A14
A15
A16
NC
GND
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
(continued)
AT49BV4096/LV4096
4-Megabit
(256K x 16)
3-volt Only
CMOS Flash
Memory
AT49BV4096
AT49LV4096
Preliminary
0874A–5/97

Related parts for AT49BV4096-15RC

AT49BV4096-15RC Summary of contents

Page 1

... A CMOS Standby Current Typical 10,000 Write Cycles Description The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 120 ns with power dissipation of just ...

Page 2

... Block Diagram Device Operation READ: The AT49BV4096/LV4096 is accessed like an EPROM. When CE and OE are low and WE is high, the data stored at the memory location determined by the ad- dress pins is asserted on the outputs. The outputs are put in the high impedance state whenever high ...

Page 3

... Examining the toggle bit may begin at any time during a program cycle. HARDWARE DATA PROTECTION: Hardware features AT49BV4096/LV4096 in the following ways: ( ...

Page 4

... SA = 1FXXX for MAIN MEMORY ARRAY 5. When the boot block programming lockout feature is not enabled, the boot block and the main memory block will erase *NOTICE: Stresses beyond those listed under “Absolute Maxi- mum Ratings” may cause permanent damage to the device. ...

Page 5

... DC and AC Operating Range Com. Operating Temperature (Case) Ind. V Power Supply AT49LV4096 CC AT49BV4096 Operating Modes Mode CE OE Read Program (2) Erase Standby/Program ( Inhibit Program Inhibit X X Program Inhibit Output Disable Reset X X Product Identification Hardware ...

Page 6

AC Read Characteristics Symbol Parameter t Address to Output Delay ACC ( Output Delay CE ( Output Delay OE ( Output Float DF Output Hold from OE, t ...

Page 7

AC Word Load Characteristics Symbol Parameter Address, OE Set-up Time AS OES t Address Hold Time AH t Chip Select Set-up Time CS t Chip Select Hold Time CH t Write Pulse Width (WE or CE) WP ...

Page 8

Program Cycle Characteristics Symbol Parameter t Word Programming Time BP t Address Set-up Time AS t Address Hold Time AH t Data Set-up Time DS t Data Hold Time DH t Write Pulse Width WP t Write Pulse Width High ...

Page 9

Data Polling Characteristics Symbol Parameter t Data Hold Time Hold Time OEH Output Delay OE t Write Recovery Time WR Notes: 1. These parameters are characterized and not 100% tested. 2. See t spec ...

Page 10

Software Product (1) Identification Entry LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 90 TO ADDRESS 5555 ENTER PRODUCT IDENTIFICATION ( MODE Software Product (1, 6) Identification Exit OR LOAD DATA AA ...

Page 11

... AT49LV4096-12TI 48T AT49LV4096-15RC 44R AT49LV4096-15TC 48T AT49LV4096-15RI 44R AT49LV4096-15TI 48T AT49LV4096-20RC 44R AT49LV4096-20TC 48T AT49LV4096-20RI 44R AT49LV4096-20TI 48T AT49BV4096-15RC 44R AT49BV4096-15TC 48T AT49BV4096-15RI 44R AT49BV4096-15TI 48T AT49BV4096-20RC 44R AT49BV4096-20TC 48T AT49BV4096-20RI 44R AT49BV4096-20TI 48T Package Type AT49BV/LV4096 Operation Range Commercial ...

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