M28W640EC-ZBF STMicroelectronics, M28W640EC-ZBF Datasheet - Page 40

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M28W640EC-ZBF

Manufacturer Part Number
M28W640EC-ZBF
Description
64 Mbit 4Mb x16/ Boot Block 3V Supply Flash Memory
Manufacturer
STMicroelectronics
Datasheet
M28W640ECT, M28W640ECB
Table 28. CFI Query System Interface Information
40/55
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
00B4h
00C6h
000Ah
0027h
0036h
0004h
0004h
0000h
0005h
0005h
0003h
0000h
Data
V
V
V
V
Typical time-out per single word program = 2
Typical time-out for Double/Quadruple Word Program = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for Word program = 2
Maximum time-out for Double/Quadruple Word Program = 2
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DD
DD
PP
PP
[Programming] Supply Minimum Program/Erase voltage
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase or Write voltage
Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
HEX value in volts
BCD value in 100 mV
BCD value in volts
BCD value in 100 mV
BCD value in volts
BCD value in 100 mV
Description
n
n
times typical
ms
n
times typical
n
n
µs
ms
n
times typical
n
µs
n
times typical
512µs
512µs
Value
11.4V
12.6V
2.7V
3.6V
16µs
16µs
NA
NA
1s
8s

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