M28W640EC-ZBF STMicroelectronics, M28W640EC-ZBF Datasheet - Page 5

• Manufacturer Part Number: M28W640EC-ZBF
• Description: 64 Mbit 4Mb x16/ Boot Block 3V Supply Flash Memory
• Manufacturer: STMicroelectronics

SUMMARY DESCRIPTION
The M28W640EC is a 64 Mbit (4 Mbit x 16) non-
volatile Flash memory that can be erased electri-
cally at block level and programmed in-system on
a Word-by-Word basis using a 2.7V to 3.6V V
supply for the circuitry and a 1.65V to 3.6V V
supply for the Input/Output pins. An optional 12V
V
er programming.
The device features an asymmetrical blocked ar-
chitecture. The M28W640EC has an array of 135
blocks: 8 Parameter Blocks of 4 KWord and 127
Main Blocks of 32 KWord. M28W640ECT has the
Parameter Blocks at the top of the memory ad-
dress space while the M28W640ECB locates the
Parameter Blocks starting from the bottom. The
memory maps are shown in Figure 5, Block Ad-
dresses.
The M28W640EC features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any acciden-
tal programming or erasure. There is an additional
hardware protection against program and erase.
When V
program or erase. All blocks are locked at Power
Up.
Each block can be erased separately. Erase can
be suspended in order to perform either read or
program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed. Each block can be
programmed and erased over 100,000 cycles.
The device includes a 192 bit Protection Register
to increase the protection of a system design. The
Protection Register is divided into a 64 bit segment
and a 128 bit segment. The 64 bit segment con-
tains a unique device number written by ST, while
the second one is one-time-programmable by the
user. The user programmable segment can be
permanently protected. Figure 6, shows the Pro-
tection Register Memory Map.
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
PP
power supply is provided to speed up custom-
PP
V
PPLK
all blocks are protected against
DDQ
DD
The memory is offered in TSOP48 (12 X 20mm)
and TFBGA48 (6.39 x 10.5mm, 0.75mm pitch)
packages and is supplied with all the bits erased
(set to ’1’).
Figure 2. Logic Diagram
Table 1. Signal Names
A0-A21
DQ0-DQ15
E
G
W
RP
WP
V
V
V
V
NC
DD
DDQ
PP
SS
A0-A21
WP
RP
W
G
E
22
M28W640ECT, M28W640ECB
Address Inputs
Data Input/Output
Chip Enable
Output Enable
Write Enable
Reset
Write Protect
Core Power Supply
Power Supply for
Input/Output
Optional Supply Voltage for
Fast Program & Erase
Ground
Not Connected Internally
V DD
M28W640ECT
M28W640ECB
V SS
V DDQ V PP
16
DQ0-DQ15
AI04378b
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