FDS6892 Fairchild Semiconductor, FDS6892 Datasheet
FDS6892
Manufacturer Part Number
FDS6892
Description
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDS6892.pdf
(5 pages)
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Part Number:
FDS6892A
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FAIRCHILD/仙童
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20 000
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Part Number:
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FAIRCHILD
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Part Number:
FDS6892AZ-NL
Manufacturer:
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Quantity:
20 000
FDS6892A
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
General Description
These N-Channel Logic Level MOSFETs are produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
FDS6892A
Fairchild
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
D
D2
Semiconductor’s
D
D2
SO-8
D
– Continuous
– Pulsed
D1
FDS6892A
D
Device
D1
Parameter
S2
S
G2
S
advanced
S1
S
G1
T
G
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
7.5 A, 20 V.
Low gate charge (12 nC)
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
Q1
Q2
–55 to +150
12mm
Ratings
R
R
DS(ON)
DS(ON)
7.5
1.6
0.9
20
30
78
40
2
1
12
= 18 m @ V
= 24 m @ V
October 2001
4
3
2
1
GS
GS
FDS6892A Rev C (W)
2500 units
Quantity
= 4.5 V
= 2.5 V
Units
C/W
C/W
W
V
V
A
C
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Datasheet:
FDS6892 Summary of contents
Page 1
... Reel Size 13’’ October 2001 4.5 V DS(ON 2.5 V DS(ON Ratings Units 7 1.6 1 0.9 –55 to +150 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS6892A Rev C (W) ...
Page 2
... Min Typ Max Units mV 100 nA –100 0.6 0.9 1.5 V –3 mV 1333 pF 301 pF 160 2 1.3 A 0.7 1 135°C/W when mounted on a minimum mounting pad. FDS6892A Rev C (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.5V 3.0V 3.5V 4. DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6892A Rev C (W) 1 ...
Page 4
... GS C ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 FDS6892A Rev C (W) 20 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...