FDS6892 Fairchild Semiconductor, FDS6892 Datasheet - Page 4

• Manufacturer Part Number: FDS6892
• Description: Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
0.01
100
0.1
10
0.001
Figure 9. Maximum Safe Operating Area.
1
5
4
3
2
1
0
0.01
0.01
Figure 7. Gate Charge Characteristics.
0
0.1
0.0001
R
1
SINGLE PULSE
R
DS(ON)
I
V
JA
T
D
GS
A
= 7.5A
= 135
= 25
LIMIT
= 4.5V
D = 0.5
o
o
C/W
C
0.2
0.1
0.1
V
0.05
DS
0.02
, DRAIN-SOURCE VOLTAGE (V)
0.01
SINGLE PULSE
5
Q
0.001
g
, GATE CHARGE (nC)
1
V
DC
DS
Figure 11. Transient Thermal Response Curve.
10s
= 5V
1s
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100ms
10
10V
10ms
0.01
15V
1ms
10
100
100
15
0.1
t
1
, TIME (sec)
2000
1500
1000
500
50
40
30
20
10
0
0
0.01
Figure 8. Capacitance Characteristics.
0
C
1
RSS
Figure 10. Single Pulse Maximum
C
OSS
0.1
V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
C
10
ISS
1
t
1
, TIME (sec)
10
P(pk)
Duty Cycle, D = t
T
R
10
J
R
- T
JA
JA
(t) = r(t) * R
100
A
t
= 135
1
= P * R
t
2
SINGLE PULSE
R
15
JA
T
A
100
o
= 135°C/W
C/W
= 25°C
FDS6892A Rev C (W)
f = 1 MHz
V
JA
1
GS
JA
(t)
/ t
= 0 V
2
1000
1000
20