FDS6892 Fairchild Semiconductor, FDS6892 Datasheet - Page 3

• Manufacturer Part Number: FDS6892
• Description: Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
1.6
1.4
1.2
0.8
0.6
30
25
20
15
10
40
30
20
10
5
0
1
0
Figure 3. On-Resistance Variation with
0.5
-50
0
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
GS
V
V
I
D
GS
DS
= 4.5V
= 7.5A
-25
= 4.5V
= 5V
0.5
V
V
3.0V
T
GS
DS
1
0
J
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
Temperature.
2.5V
25
1
1.5
50
T
1.5
A
75
= -55
2.0V
o
C
100
o
C)
2
125
2
o
25
C
125
o
C
150
2.5
2.5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.045
0.035
0.025
0.015
0.001
0.04
0.03
0.02
0.01
0.01
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
10
2
1
1
0
1
0
Drain Current and Gate Voltage.
V
V
GS
GS
T
A
= 2.0V
= 0V
= 25
Gate-to-Source Voltage.
V
o
0.2
SD
C
V
, BODY DIODE FORWARD VOLTAGE (V)
10
GS
2
T
, GATE TO SOURCE VOLTAGE (V)
A
2.5V
= 125
I
D
T
, DRAIN CURRENT (A)
A
= 125
o
0.4
C
3.0V
o
C
20
3
25
o
C
0.6
3.5V
-55
o
C
30
4
0.8
FDS6892A Rev C (W)
I
D
4.5V
= 3.8A
40
5
1