LND150N3 Supertex Inc, LND150N3 Datasheet - Page 4
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LND150N3
Manufacturer Part Number
LND150N3
Description
N-Channel Depletion-Mode MOSFET
Manufacturer
Supertex Inc
Datasheet
1.LND150N3.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
LND150N3-G
Manufacturer:
SAMSUNG
Quantity:
5 000
Typical Performance Curves
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
1.1
1.0
0.9
10
10
5
0
5
0
-50
0
Capacitance vs. Drain-to-Source Voltage
-1
V
BV
GS
V
DSS
= -5V
DS
Transfer Characteristics
10
0
= 400V
Variation with Temperature
0
V
V
DS
GS
T
j
50
20
(°C)
(volts)
(volts)
1
V
GS
2
= -10V
100
30
C
C
C
ISS
OSS
RSS
3
150
40
4
1.8
1.6
1.4
1.2
1.0
0.8
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
-5
5
0
-50
10
V
0
125°C
GS(OFF)
Gate Drive Dynamic Characteristics
V
DS
and R
= 20V
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
TEL: (408) 744-0100 • FAX: (408) 222-4895
0
8.7pF
Q
25°C
0.1
R
C
DS
I
R
D
SOURCE
(nanocoulombs)
DS(ON)
Variation with Temperature
vs. R
T
j
1K
50
(°C)
@ I
(ohms)
SOURCE
V
GS(OFF)
D
40V
0.2
= 1mA
R
10K
100
SOURCE
I
LND1
↓
D
@ 100nA
60V
www.supertex.com
100K
150
0.3
2.0
1.6
1.2
0.8
0.4
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