ISPLSI2128VE Lattice Semiconductor, ISPLSI2128VE Datasheet - Page 3

• Manufacturer Part Number: ISPLSI2128VE
• Description: 3.3V In-System Programmable SuperFAST High Density PLD
• Manufacturer: Lattice Semiconductor

Supply Voltage V
Input Voltage Applied ............................... -0.5 to +5.6V
Off-State Output Voltage Applied ............ -0.5 to +5.6V
Storage Temperature ................................ -65 to 150 C
Case Temp. with Power Applied .............. -55 to 125 C
Max. Junction Temp. (T
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
V
V
V
C
C
C
Erase Reprogram Specifications
Absolute Maximum Ratings
DC Recommended Operating Condition
Capacitance (T
Erase/Reprogram Cycles
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
CC
IL
IH
1
2
3
SYMBOL
SYMBOL
Dedicated Input Capacitance
I/O Capacitance
Clock and Global Output Enable Capacitance
cc
PARAMETER
.................................. -0.5 to +5.4V
Supply Voltage
Input Low Voltage
Input High Voltage
A
=25 C, f=1.0 MHz)
J
) with Power Applied ... 150 C
PARAMETER
1
PARAMETER
Commercial
Industrial
MINIMUM
3
10,000
Specifications ispLSI 2128VE
T
T
A
A
= 0 C to + 70 C
= -40 C to + 85 C
TYPICAL
10
8
6
MAXIMUM
UNITS
–
pf
pf
pf
V – 0.5
SS
MIN.
3.0
3.0
2.0
V = 3.3V, V = 0.0V
V = 3.3V, V = 0.0V
V = 3.3V, V = 0.0V
CC
CC
CC
TEST CONDITIONS
MAX.
5.25
3.6
3.6
0.8
UNITS
Cycles
Table 2-0005/2128VE
Table 2-0006/2128VE
Table 2-0008/2128VE
IN
I/O
Y
UNITS
V
V
V
V