AS7C256 ETC, AS7C256 Datasheet - Page 3

• Manufacturer Part Number: AS7C256
• Description: High Performance 32Kx8 CMOS SRAM
• Manufacturer: ETC

Parameter
Parameter
Parameter
Supply Voltage
Input Voltage
*V
Input Leakage
Current
Output Leakage
Current
Operating Power
Supply Current
Standby
Power Supply
Current
Output Voltage
Input Capacitance
I/O Capacitance
RECOMMENDED OPERATING CONDITIONS
DC OPERATING CHARACTERISTICS
CAPACITANCE
IL
min = –3.0V for pulse width less than t
2
Symbol Test Conditions
I
I
I
V
V
I
I
CC
SB
SB1
LI
LO
OL
OH
V
V
CE = V
V
CE = V
I
CE = V
CE > V
V
V
I
I
out
OL
OH
CC
in
out
in
in
= GND to V
= 0 mA
= 8 mA, V
= –4 mA, V
= GND to V
= Max,
0.2V or
V
IH
IL
IH
CC
CC
, f = f
, V
, f = f
–0.2V, f = 0,
–0.2V
CC
RC
max,
CC
max
= Max,
CC
CC
1
/2.
CC
= Min
Symbol
C
C
= Min
IN
I/O
L
L
L
Symbol
Signals
A, CE, WE, OE
I/O
V
GND
V
V
Min Max Min Max Min Max Min Max Min Max Min Max
2.4
–
–
–
–
–
–
–
–
–
CC
IH
IL
-10
3
120
115
2.0
0.5
0.4
45
40
1
1
–
2.4
–
–
–
–
–
–
–
–
–
-12
Min
4.5
0.0
2.2
–0.5*
(V
115
110
2.0
0.5
0.4
(f = 1 MHz, T
40
35
1
1
–
CC
2.4
= 5V 10%, GND = 0V, T
Test Conditions
–
–
–
–
–
–
–
–
–
V
V
-15
in
in
= 0V
= V
110
105
2.0
0.5
0.4
30
25
1
1
–
out
Typ
5.0
0.0
–
–
a
2.4
= Room Temperature, V
= 0V
–
–
–
–
–
–
–
–
–
-20
100
0.4
2.0
0.5
95
30
25
1
1
–
2.4
–
–
–
–
–
–
–
–
–
Max
-25
5
7
Max
5.5
0.0
V
0.8
(T
2.0
0.5
0.4
90
85
25
20
CC
1
1
–
a
a
= 0°C to +70°C)
+1
= 0°C to +70°C)
2.4
–
–
–
–
–
–
–
–
–
AS7C256
AS7C256L
-35
CC
2.0
0.5
0.4
80
75
25
20
1
1
–
Unit
pF
pF
= 5V)
Unit
V
V
V
V
Unit
mA
mA
mA
mA
mA
mA
V
V
A
A