BS62LV4001DC Brilliance Semiconductor, BS62LV4001DC Datasheet - Page 3

• Manufacturer Part Number: BS62LV4001DC
• Description: Low Power/Voltage CMOS SRAM 512K X 8 bit
• Manufacturer: Brilliance Semiconductor

R0201-BS62LV4001
1. Typical characteristics are at T
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
DATA RETENTION CHARACTERISTICS
LOW V
PARAMETER
DC ELECTRICAL CHARACTERISTICS
1. Vcc = 1.5V, T
2. t
Vcc
CE
SYMBOL
RC
NAME
I
I
t
I
V
CCDR
CCSB1
CDR
V
CCSB
V
t
V
I
V
I
DR
R
= Read Cycle Time
I
OL
CC
OH
IL
OL
IH
IL
CC
BSI
RC
DATA RETENTION WAVEFORM
.
Vcc for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
A
= + 25
Guaranteed Input Low
Voltage
Guaranteed Input High
Voltage
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Operating Power Supply
Current
Standby Current-TTL
Standby Current-CMOS
PARAMETER
PARAMETER
O
C
(2)
(2)
A
= 25
o
C.
V
IH
t
Vcc
CDR
Vcc = Max, V
Vcc = Max, CE = V
V
Vcc = Max, I
Vcc = Min, I
CE = V
CE = V
CE
V
CE
V
CE
V
See Retention Waveform
I/O
IN
IN
IN
= 0V to Vcc
( TA = 0 to + 70
( TA = 0 to + 70
Vcc - 0.2V or V
IL
IH
Vcc-0.2V,
, I
, I
TEST CONDITIONS
Vcc - 0.2V or V
Vcc - 0.2V or V
Vcc - 0.2V
Vcc - 0.2V
TEST CONDITIONS
DQ
( CE Controlled )
DQ
OH
OL
= 0mA, F = Fmax
= 0mA
IN
= -1mA
= 2mA
= 0V to Vcc
Data Retention Mode
3
CE
IH
V
, or OE = V
≥
DR
Vcc - 0.2V
o
IN
≥
C )
IN
IN
o
1.5V
C )
0.2V
0.2V
0.2V
(3)
IH
,
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
Vcc=3.0V
Vcc=5.0V
MIN.
T
1.5
Vcc
RC
--
0
t
(2)
R
-0.5
2.0
2.2
2.4
V
MIN. TYP.
--
--
--
--
--
--
--
--
--
IH
TYP.
0.1
--
--
--
BS62LV4001
(1)
0.25
1.5
--
--
--
--
--
--
--
--
--
--
MAX.
(1)
--
--
1
--
MAX.
Vcc+0.2
0.8
0.4
1.5
20
45
15
1
1
--
1
2
Revision 2.5
April 2002
UNITS
uA
ns
ns
V
UNITS
mA
mA
uA
uA
uA
V
V
V
V