BS62LV4001DC Brilliance Semiconductor, BS62LV4001DC Datasheet - Page 6

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BS62LV4001DC

Manufacturer Part Number
BS62LV4001DC
Description
Low Power/Voltage CMOS SRAM 512K X 8 bit
Manufacturer
Brilliance Semiconductor
Datasheet
R0201-BS62LV4001
WRITE CYCLE1
WRITE CYCLE
SWITCHING WAVEFORMS (WRITE CYCLE)
AC ELECTRICAL CHARACTERISTICS
PARAMETER
t
JEDEC
t
t
t
t
t
t
t
t
t
t
NAME
AVAX
E1LWH
AVW L
AVWH
WLWH
WHAX
WLOZ
DVWH
WHDX
GHOZ
WHQX
ADDRESS
OE
CE
WE
D
D
IN
BSI
OUT
PARAMETER
(1)
NAME
t
t
t
t
t
t
t
t
t
t
t
WC
CW
AS
AW
WP
WR
WHZ
DW
DH
OHZ
OW
Write Cycle Time
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End ot Write to Output Active
t
(4,10)
AS
t
OHZ
DESCRIPTION
( TA = 0 to + 70
(5)
t
AW
6
(CE , WE)
t
t
t
o
WC
C , Vcc = 3.0V )
CW
WP
(11)
(2)
70
70
70
35
30
MIN. TYP. MAX.
--
0
0
0
0
5
BS62LV4001-70
t
DW
--
--
--
--
--
--
--
--
--
--
--
t
t
30
30
--
--
--
--
--
--
--
--
--
WR
DH
(3)
100
100
100
50
40
10
BS62LV4001
MIN. TYP. MAX.
0
0
--
0
0
BS62LV4001-10
--
--
--
--
--
--
--
--
--
--
--
40
40
--
--
--
--
--
--
--
--
--
Revision 2.5
April 2002
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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