AM29DL640H AMD, AM29DL640H Datasheet - Page 3
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AM29DL640H
Manufacturer Part Number
AM29DL640H
Description
64 Megabit CMOS 3.0 Volt-only / Simultaneous Read/Write Flash Memory
Manufacturer
AMD
Datasheet
1.AM29DL640H.pdf
(54 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
AM29DL640H-90EI
Manufacturer:
AMD
Quantity:
61
Part Number:
AM29DL640H55EI
Manufacturer:
AMD
Quantity:
20 000
Part Number:
AM29DL640H60EI
Manufacturer:
AMD
Quantity:
20 000
For new designs, S29JL064H supersedes Am29DL640H and is the factory-recommended migration path for this
device. Please refer to the S29JL064H Datasheet for specifications and ordering information.
Am29DL640H
64 Megabit (8 M x 8-Bit/4 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Simultaneous Read/Write operations
■ Flexible Bank
■ Boot Sectors
■ Manufactured on 0.13 µm process technology
■ Secured Silicon Sector: Extra 256 Byte sector
■ Zero Power Operation
■ Compatible with JEDEC standards
PACKAGE OPTIONS
■ 63-ball Fine Pitch BGA
■ 48-pin TSOP
PERFORMANCE CHARACTERISTICS
■ High performance
— Data can be continuously read from one bank while
— Zero latency between read and write operations
— Read may occur in any of the three banks not being
— Four banks may be grouped by customer to achieve
— Top and bottom boot sectors in the same device
— Any combination of sectors can be erased
— Factory locked and identifiable: 16 bytes available for
— Customer lockable: One-time programmable only.
— Sophisticated power management circuits reduce
— Pinout and software compatible with
— Access time as fast as 55 ns
— Program time: 4 µs/word typical using accelerated
executing erase/program functions in another bank.
written or erased.
desired bank divisions.
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
Once locked, data cannot be changed
power consumed during inactive periods to nearly
zero.
single-power-supply flash standard
programming function
TM
architecture
Refer to AMD’s Website (www.amd.com) for the latest information.
■ Ultra low power consumption (typical values)
■ Minimum 1 million erase cycles guaranteed per
■ 20 year data retention at 125°C
SOFTWARE FEATURES
■ Data Management Software (DMS)
■ Supports Common Flash Memory Interface (CFI)
■ Erase Suspend/Erase Resume
■ Data# Polling and Toggle Bits
■ Unlock Bypass Program command
HARDWARE FEATURES
■ Ready/Busy# output (RY/BY#)
■ Hardware reset pin (RESET#)
■ WP#/ACC input pin
■ Sector protection
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
sector
— Reliable operation for the life of the system
— AMD-supplied software manages data programming,
— Suspends erase operations to read data from, or
— Provides a software method of detecting the status of
— Reduces overall programming time when issuing
— Hardware method for detecting program or erase
— Hardware method of resetting the internal state
— Write protect (WP#) function protects sectors 0, 1,
— Acceleration (ACC) function accelerates program
— Hardware method to prevent any program or erase
— Temporary Sector Unprotect allows changing data in
enabling EEPROM emulation
program data to, a sector that is not being erased,
then resumes the erase operation.
program or erase cycles
multiple program command sequences
cycle completion
machine to the read mode
140, and 141, regardless of sector protect status
timing
operation within a sector
protected sectors in-system
Publication# 27082
Issue Date: February 9, 2005
Rev: A Amendment/6