AM29DL640H AMD, AM29DL640H Datasheet - Page 50

• Manufacturer Part Number: AM29DL640H
• Description: 64 Megabit CMOS 3.0 Volt-only / Simultaneous Read/Write Flash Memory
• Manufacturer: AMD

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 12 for further
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
TSOP & BGA PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
48
Parameter
Sector Erase Time
Chip Erase Time
Byte Program Time
Accelerated Byte/Word Program Time
Accelerated Chip Programming Time
Word Program Time
Chip Program Time
(Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
Parameter Description
Minimum Pattern Data Retention Time
CC
assume checkerboard pattern.
maximum program times listed.
information on command definitions.
Current
Parameter Symbol
C
C
C
OUT
IN2
IN
A
= 25°C, f = 1.0 MHz.
SS
SS
Description
on all pins except I/O pins
on all I/O pins
CC
Word Mode
Byte Mode
Control Pin Capacitance
Parameter Description
. Test conditions: V
Output Capacitance
Input Capacitance
CC
= 2.7 V, 1,000,000 cycles.
CC
Typ (Note 1)
Am29DL640H
= 3.0 V, one pin at a time.
0.4
56
10
42
28
5
4
7
V
V
V
OUT
IN
IN
Max (Note 2)
= 0
= 0
= 0
150
120
210
126
30
84
Test Setup
5
CC
, 1,000,000 cycles. Additionally, programming typicals
Test Conditions
–100 mA
–1.0 V
–1.0 V
Fine-pitch BGA
Fine-pitch BGA
Fine-pitch BGA
Min
150°C
125°C
TSOP
TSOP
TSOP
Unit
sec
sec
sec
sec
µs
µs
µs
Excludes 00h programming
Typ
prior to erasure (Note 4)
4.2
8.5
5.4
7.5
3.9
6
Excludes system level
overhead (Note 5)
Comments
February 9, 2005
V
+100 mA
CC
Max
7.5
5.0
6.5
4.7
12.5 V
12
Min
9
Max
10
20
+ 1.0 V
Unit
Years
Years
Unit
pF
pF
pF
pF
pF
pF