K9F1208D0B Samsung semiconductor, K9F1208D0B Datasheet - Page 12

• Manufacturer Part Number: K9F1208D0B
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F1208R0B
K9F1208B0B
K9F1208U0B
DC AND OPERATING CHARACTERISTICS
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All
inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
Operating
Current
Parameter
Sequential Read
Program
Erase
Symbol
I
OL
I
I
I
I
I
V
V
V
V
CC
CC
CC
SB
SB
I
(R/B)
I
LO
LI
IH*
OH
IL*
OL
1
2
1
2
3
tRC=50ns
(K9F1208R0B : 60ns),
CE=V
I
CE=V
CE=V
V
V
I/O pins
Except I/O pins
K9F1208R0B :I
K9F1208B0B :I
K9F1208U0B :I
K9F1208R0B :I
K9F1208B0B :I
K9F1208U0B :I
K9F1208R0B :V
K9F1208B0B :V
K9F1208U0B :V
OUT
IN
OUT
=0 to Vcc(max)
=0mA
Test Conditions
=0 to Vcc(max)
IL
IH
CC
, WP=0V/V
-0.2, WP=0V/V
-
-
-
OH
OL
OH
OH
OL
OL
OL
OL
OL
=100µA
=100uA
=2.1mA
=-100µA
=-100µA
=-400µA
=0.1V
=0.1V
=0.4V
CC
CC
(Recommended operating conditions otherwise noted.)
V
V
12
Min
-0.4
V
-0.4
-0.3
-0.1
CCQ
CCQ
3
-
-
-
-
-
-
-
CC
-
1.8V
Typ
10
8
8
8
4
-
-
-
-
-
-
-
-
V
Max
+0.3
+0.3
V
±10
±10
0.4
0.1
15
15
15
50
CCQ
1
CC
-
-
V
V
Min
-0.4
V
-0.4
-0.3
-0.4
CCQ
CCQ
K9F1208X0B
CC
3
-
-
-
-
-
-
-
-
2.7V
Typ
10
10
10
10
4
-
-
-
-
-
-
-
-
V
Max
+0.3
+0.3
±10
±10
V
0.5
0.4
FLASH MEMORY
20
20
20
50
CCQ
1
CC
-
-
Min
-0.3
2.0
2.0
2.4
8
-
-
-
-
-
-
-
-
Preliminary
3.3V
Typ
10
10
10
10
10
-
-
-
-
-
-
-
-
V
Max
+0.3
+0.3
V
±10
±10
0.8
0.4
20
20
20
50
CCQ
1
CC
-
-
Unit
mA
mA
µA
V