K9F1208D0B Samsung semiconductor, K9F1208D0B Datasheet - Page 14

• Manufacturer Part Number: K9F1208D0B
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F1208R0B
K9F1208B0B
K9F1208U0B
PROGRAM / ERASE CHARACTERISTICS
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
NOTE: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
NOTE : 1.Typical program time is defined as the time within more than 50% of the whole pages are programmed at Vcc of 3.3V and 25’C
CLE setup Time
CLE Hold Time
CE setup Time
CE Hold Time
WE Pulse Width
ALE setup Time
ALE Hold Time
Data setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
Program Time
Dummy Busy Time for Multi Plane Program
Number of Partial Program Cycles
in the Same Page
Block Erase Time
Parameter
2. TBD means "To Be Determinded".
Symbol
t
Parameter
t
t
t
WP
t
t
t
t
t
t
t
CLS
CLH
ALS
ALH
WC
WH
CH
DH
CS
DS
(1)
1.8V
10
10
40
10
20
10
60
20
0
0
0
Spare Array
Main Array
2.7V
Min
10
10
25
10
20
10
45
15
0
0
0
Symbol
t
PROG
t
t
DBSY
Nop
BERS
14
3.3V
(1)
10
10
25
10
20
10
45
15
0
0
0
Min
-
-
-
-
1.8V
-
-
-
-
-
-
-
-
-
-
-
Typ
200
1
2
-
-
Max
2.7V
FLASH MEMORY
-
-
-
-
-
-
-
-
-
-
-
Max
500
10
Preliminary
1
2
3
3.3V
-
-
-
-
-
-
-
-
-
-
-
cycles
cycle
Unit
ms
µs
µs
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns