M464S3254DTS Samsung semiconductor, M464S3254DTS Datasheet
M464S3254DTS
Related parts for M464S3254DTS
M464S3254DTS Summary of contents
Page 1
... GENERAL DESCRIPTION The Samsung M464S3254DTS is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M464S3254DTS consists of eight CMOS 16M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-epoxy substrate ...
Page 2
... M464S3254DTS PIN CONFIGURATION DESCRIPTION Pin Name CLK System clock CS Chip select CKE Clock enable A0 ~ A12 Address BA0 ~ BA1 Bank select address RAS Row address strobe CAS Column address strobe WE Write enable DQM0 ~ 7 Data input/output mask DQ ~ Data input/output Power supply/ground ...
Page 3
... M464S3254DTS FUNCTIONAL BLOCK DIAGRAM CS1 CS0 DQM0 LDQM CS DQ0 DQ0 DQ1 DQ1 DQ2 DQ2 U0 DQ3 DQ3 DQ4 DQ4 DQ5 DQ5 DQ6 DQ6 DQ7 DQ7 UDQM DQM1 DQ8 DQ8 DQ9 DQ9 DQ10 DQ10 DQ11 DQ11 DQ12 DQ12 DQ13 DQ13 DQ14 DQ14 DQ15 ...
Page 4
... M464S3254DTS ABSOLUTE MAXIMUM RATINGS Parameter Voltage on any pin relative to Vss Voltage on V supply relative to Vss DD Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. ...
Page 5
... M464S3254DTS DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, T Parameter Symbol Operating current I CC1 (One bank active Precharge standby cur- CC2 rent in power-down mode I PS CC2 I N CC2 Precharge standby cur- rent in non power-down mode I NS CC2 I P Active standby current in ...
Page 6
... M464S3254DTS AC OPERATING TEST CONDITIONS Parameter AC input levels (Vih/Vil) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Output 870 (Fig output load circuit OPERATING AC PARAMETER (AC operating conditions unless otherwise noted) Parameter ...
Page 7
... M464S3254DTS AC CHARACTERISTICS (AC operating conditions unless otherwise noted) REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE. Parameter CAS latency=3 CLK cycle time CAS latency=2 CAS latency=3 CLK to valid output delay CAS latency=2 CAS latency=3 Output data hold time CAS latency=2 CLK high pulse width ...
Page 8
... M464S3254DTS SIMPLIFIED TRUTH TABLE Command Register Mode register set Auto refresh Entry Refresh Self refresh Bank active & row addr. Read & Auto precharge disable column address Auto precharge enable Write & Auto precharge disable column address Auto precharge enable Burst stop ...
Page 9
... M464S3254DTS PACKAGE DIMENSIONS 0.16 0.039 (4.00 0.10) 1 0.13 (3.30) 0.15 (3.70) 2 0.150 Max (3.80 Max) 0.04 0.0039 (1.00 0.10) Tolerances : .006(.15) unless otherwise specified The used device is 16Mx16 SDRAM, TSOP SDRAM Part No. : K4S561632D 2.66 (67.56) 2.50 (63.60 0.91 1.29 (23.20) (32.80) 0.18 (4.60) 0.083 (2.10) 0.10 (2.50 0.16 0.0039 (4.00 0.10) 0.06 0.0039 (1.50 0.1) Detail Z PC133/PC100 SODIMM Units : Inches (Millimeters) 2-R 0.078 Min (2.00 Min) 143 2- 0.07 (1.80) Y 144 0.024 ...
Page 10
... M464S3254DTS M464S3254DTS-L7C/L7A/L1H/L1L, C7C/C7A/C1H/C1L • Organization : 32MX64 • Composition : 16MX16 *8 • Used component part # : K4S561632D-TL7C/7A/1H/1L,TC7C/7A/1H/1L • rows in module : 2row • banks in component : 4 banks • Feature : 1,250 mil height & double sided component • Refresh : 8K/64ms • Contents : Byte#. Function described bytes written into serial memory at module manufacturer ...
Page 11
... M464S3254DTS SERIAL PRESENCE DETECT INFORMATION Byte # Function described 35 Data signal input hold time 36~61 Superset information (maybe used in future) 62 SPD data revision code 63 Checksum for bytes Manufacturer JEDEC ID code 65~71 ...... Manufacturer JEDEC ID code 72 Manufacturing location 73 Manufacturer part # (Memory module) 74 Manufacturer part # (DIMM configuration) ...