M464S3254DTS Samsung semiconductor, M464S3254DTS Datasheet - Page 5

• Manufacturer Part Number: M464S3254DTS
• Description: 32Mx64 SDRAM SODIMM based on 16Mx16 / 4Banks / 8K Refresh / 3.3V Synchronous DRAMs with SPD
• Manufacturer: Samsung semiconductor

(Recommended operating condition unless otherwise noted, T
DC CHARACTERISTICS
M464S3254DTS
Operating current
(One bank active)
Precharge standby cur-
rent in power-down mode
Precharge standby cur-
rent in non power-down
mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
N
N
P
P
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4banks Activated.
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IH
IH
IH
IH
(min)
IL
IL
(min)
(max), t
(min), CS
(min), CLK
(max), t
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
V
V
= 0 to 70 C)
V
V
IH
IH
IH
CC
CC
IL
IL
(min), t
(min), t
/V
(max), t
(max), t
IL
=
=
=V
DDQ
CC
CC
CC
CC
= 10ns
= 10ns
/V
=
=
SSQ
).
C
L
1000
PC133/PC100 SODIMM
-7C
560
680
520
680
920
-7A
Version
Rev. 0.0 Jan. 2002
160
240
200
16
16
80
48
48
24
12
520
640
880
-1H
520
640
880
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2