M464S3254DTS Samsung semiconductor, M464S3254DTS Datasheet - Page 7

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M464S3254DTS

Manufacturer Part Number
M464S3254DTS
Description
32Mx64 SDRAM SODIMM based on 16Mx16 / 4Banks / 8K Refresh / 3.3V Synchronous DRAMs with SPD
Manufacturer
Samsung semiconductor
Datasheet
AC CHARACTERISTICS
REFER TO THE INDIVIDUAL COMPONENET, NOT THE WHOLE MODULE.
Notes :
M464S3254DTS
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
SAC
t
t
t
SHZ
SLZ
OH
CC
CH
SH
CL
SS
Min
7.5
7.5
2.5
2.5
1.5
0.8
3
3
1
-7C
1000
Max
5.4
5.4
5.4
5.4
Min
7.5
2.5
2.5
1.5
0.8
10
3
3
1
-7A
1000
Max
5.4
5.4
6
6
Min
10
10
3
3
3
3
2
1
1
-1H
PC133/PC100 SODIMM
1000
Max
6
6
6
6
Rev. 0.0 Jan. 2002
Min
10
12
3
3
3
3
2
1
1
-1L
1000
Max
6
7
6
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1
2
3
3
3
3
2

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