M470T6554CZ0 Samsung semiconductor, M470T6554CZ0 Datasheet - Page 12

• Manufacturer Part Number: M470T6554CZ0
• Description: DDR2 Unbuffered SODIMM
• Manufacturer: Samsung semiconductor

Input/Output Capacitance
Note: DM is internally loaded to match DQ and DQS identically.
256MB, 512MB, 1GB Unbuffered SODIMMs
M470T2953CZ0: 128Mx64 1GB Module
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Operating Current Table(1-2)
Input capacitance, CK and CK
Input capacitance, CKE , CS, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
Symbol
IDD3P-F
IDD3P-S
IDD4W
IDD2Q
IDD2N
IDD3N
IDD4R
IDD2P
IDD0
IDD1
IDD5
IDD6
IDD7
CD6
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667@CL=4
Parameter
Non-ECC
LD6
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(V
1,560
1,560
CE6
DD
160
560
760
128
667@CL=5
=1.8V, V
(T
1,040
1,120
1,640
2,160
192
560
640
A
=0
o
C, VDD= 1.9V)
DDQ
LE6
CCK
CI
CIO(400/533)
CIO(667)
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Symbol
=1.8V, T
1,320
1,320
CD5
960
160
480
680
128
A
533@CL=4
=25
1,040
1,560
2,080
o
560
560
192
C)
M470T6554CZ0
Min
-
-
-
-
1,240
1,160
LD5
960
400
640
80
64
Max
32
34
10
9
1,200
1,200
CCC
960
160
480
680
128
400@CL=3
1,000
1,520
2,040
480
560
192
M470T3354CZ0
Min
-
-
-
-
1,160
1,160
LCC
880
400
640
80
64
Max
5.5
24
34
6
Rev. 1.1 Mar. 2005
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
DDR2 SDRAM
M470T2953CZ0
Min
-
-
-
-
Notes
Max
48
42
10
9
Units
pF