M470T6554CZ0 Samsung semiconductor, M470T6554CZ0 Datasheet - Page 13

• Manufacturer Part Number: M470T6554CZ0
• Description: DDR2 Unbuffered SODIMM
• Manufacturer: Samsung semiconductor

256MB, 512MB, 1GB Unbuffered SODIMMs
Electrical Characteristics & AC Timing for DDR2-667/533/400
Refresh Parameters by Device Density
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Timing Parameters by Speed Grade
(Refer to notes for informations related to this table at the bottom)
Refresh to active/Refresh command
time
Average periodic refresh interval
Bin
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tRCD
tRP
tRC
tRAS
DQ output access time
from CK/CK
DQS output access
time from CK/CK
CK high-level width
CK low-level width
CK half period
Clock cycle time, CL=x
DQ and DM input hold
time
(CL - tRCD - tRP)
Parameter
Speed
(0 °C < T
Parameter
OPER
DDR2-667(D6)
Symbol
tAC
tDQSCK
tCH
tCL
tHP
tCK
tDH(base)
min
12
12
51
39
5
3
3
< 95 °C; V
4 - 4 - 4
70000
max
8
8
8
min(tCL
DDQ
, tCH)
3000
min
-400
0.45
0.45
-450
175
DDR2-667
tRFC
tREFI
= 1.8V + 0.1V; V
DDR2-667(E6)
3.75
min
15
15
54
39
5
3
5 - 5 - 5
max
+400
8000
0.55
0.55
+450
x
x
85 °C < T
0 °C ≤ T
Symbol
70000
max
8
8
8
min(tCL
, tCH)
3750
min
0.45
0.45
-500
-450
225
CASE
CASE
DDR2-533
DD
= 1.8V + 0.1V)
≤ 85°C
DDR2-533(D5)
3.75
3.75
≤ 95°C
min
15
15
55
40
5
4 - 4 - 4
max
+500
+450
8000
0.55
0.55
x
x
70000
max
256Mb
8
8
8
min(tCL
7.8
3.9
75
, tCH)
5000
min
-600
-500
0.45
0.45
275
DDR2-400
DDR2-400(CC)
min
512Mb
15
15
55
40
5
5
-
105
7.8
3.9
max
+600
+500
3 - 3 - 3
0.55
0.55
8000
x
x
70000
max
127.5
8
8
Units
1Gb
-
7.8
3.9
tCK
tCK
ps
ps
ps
ps
ps
Units
2Gb
Notes
195
7.8
3.9
ns
ns
ns
ns
ns
ns
ns
327.5
Rev. 1.1 Mar. 2005
4Gb
7.8
3.9
DDR2 SDRAM
Units
ns
µs
µs