HYS64V16300GU Infineon, HYS64V16300GU Datasheet - Page 10

• Manufacturer Part Number: HYS64V16300GU
• Description: 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
• Manufacturer: Infineon

INFINEON Technologies
AC Characteristics (cont’d)
T
CAS to CAS Delay Time
(same bank)
Refresh Cycle
Refresh Period (4096 cycles)
Self-Refresh Exit Time
Read Cycle
Data Out Hold Time
Data Out to Low Impedance
Data Out to High Impedance
DQM Data Out Disable
Latency
Write Cycle
Data Input to Precharge
(write recovery)
DQM Write Mask Latency
Parameter
A
= 0 to 70 C;
V
SS
= 0 V;
V
DD
3), 4)
Symbol
t
t
t
t
t
t
t
t
t
= 3.3 V 0.3 V,
CCD
REF
SREX
OH
LZ
HZ
DQZ
WR
DQW
min.
1
–
1
3
0
3
–
2
0
PC133-222
-7
t
10
T
max. min.
–
64
–
–
–
7
2
–
–
= 1 ns
Limit Values
1
–
1
3
0
3
–
2
0
PC133-333
-7.5
HYS 64/72V16300/32220GU
max. min.
–
64
–
–
–
7
2
–
–
1
–
1
3
0
3
–
2
0
PC100-222
SDRAM-Modules
-8
max.
–
64
–
–
–
8
2
–
–
Unit
CLK
ms
CLK
ns
ns
ns
CLK
CLK
CLK
Note
–
10)
4)
–
11
–
–
–
9.01